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    2N5190 EQUIVALENT Search Results

    2N5190 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N5190 EQUIVALENT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    PDF 2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191

    2N5190

    Abstract: 2N5190 equivalent pin details of 2N5190
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V


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    PDF 2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191 2N5190 equivalent pin details of 2N5190

    2N5190

    Abstract: No abstract text available
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V


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    PDF 2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191

    2N5192G

    Abstract: 2N5190 2N5190G 2N5190..92 pin details of 2N5190 2N5191 2N5191G 2N5192 2N5194 2N5195
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V


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    PDF 2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191 2N5192G 2N5190 2N5190G 2N5190..92 pin details of 2N5190 2N5191 2N5191G 2N5192 2N5194 2N5195

    Untitled

    Abstract: No abstract text available
    Text: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V


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    PDF 2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191

    2N5192 MOTOROLA

    Abstract: 2N5190 MOTOROLA 2N5190..92 MJE5190 03 transistor 2N5195 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR Motorola Power Transistor Data Book 2N5190 2N5191
    Text: MOTOROLA Order this document by 2N5191/D SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    PDF 2N5191/D* 2N5191/D 2N5192 MOTOROLA 2N5190 MOTOROLA 2N5190..92 MJE5190 03 transistor 2N5195 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR Motorola Power Transistor Data Book 2N5190 2N5191

    Granberg

    Abstract: motorola application note AN-758 stackpole 57-1845-24b Stackpole 57-3238 AN762 RF AMPLIFIER t3c6c mc1723g AN762 eb27a Q1 BC 558 transistor
    Text: Order this document by AN762/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN762 LINEAR AMPLIFIERS FOR MOBILE OPERATION Prepared by: Helge O. Granberg RF Circuits Engineering INTRODUCTION The three versions of the amplifier described here are intended mainly for amateur radio applications, but are


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    PDF AN762/D AN762 MRF455 MRF460 MRF453 MRF454 MRF458 MRF421 Granberg motorola application note AN-758 stackpole 57-1845-24b Stackpole 57-3238 AN762 RF AMPLIFIER t3c6c mc1723g AN762 eb27a Q1 BC 558 transistor

    vhf linear amplifier mrf245

    Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
    Text: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique


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    PDF AN791/D AN791 vhf linear amplifier mrf245 amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245

    2N5192G

    Abstract: No abstract text available
    Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    PDF 2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G 2N5192G

    Untitled

    Abstract: No abstract text available
    Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    PDF 2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G

    MJE5190

    Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
    Text: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN


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    PDF 2N5191 2N5192 2N5194, 2N5195. r14525 2N5191/D MJE5190 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195

    MJE5190

    Abstract: 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195
    Text: ON Semiconductort 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN


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    PDF 2N5191 2N5192 2N5194, 2N5195. r14525 2N5191/D MJE5190 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195

    Stackpole 57-9322-11

    Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
    Text: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB


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    PDF AN593/D AN593 Stackpole 57-9322-11 EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


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    PDF 2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100

    magnetic core ferroxcube 3E2A

    Abstract: ferroxcube 4C4 toroid core EB-27 motorola ecom-2989 Stackpole Electronics 57-0572-27A Stackpole 57-9322-11 philips choke vk200 Motorola AN-546 magnetic core philips 3E2A A73D
    Text: Order this document by AN758/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN758 A TWO-STAGE 1 kW SOLID-STATE LINEAR AMPLIFIER Prepared by: Helge O. Granberg RF Circuits Engineering INTRODUCTION GENERAL DESIGN CONSIDERATIONS This application note discusses the design of 50 W and


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    PDF AN758/D AN758 50-Ohm magnetic core ferroxcube 3E2A ferroxcube 4C4 toroid core EB-27 motorola ecom-2989 Stackpole Electronics 57-0572-27A Stackpole 57-9322-11 philips choke vk200 Motorola AN-546 magnetic core philips 3E2A A73D

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    tp 312 transistor

    Abstract: Motorola transistors 2N5192 2N5190 MOTOROLA 2N5190
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N 5192* Silicon NPN Power TVansistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194,2N5195. •MAXIMUM RATINGS Rating Collector-Emitter Voltage


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    PDF 2N5194 2N5195. 2N5191 2N5192 2N5190 tp 312 transistor Motorola transistors 2N5192 2N5190 MOTOROLA

    Stackpole 57-3238

    Abstract: MPC1000 Toroid 57-9322 57-1845-24b Indiana general ferrite core Stackpole ferrite eb27a stackpole 57-1845-24b EB-27A 300w amplifier 30mhz
    Text: C O M M U N IC A T IO N S Get 300 Watts PEP linear Across 2 To 30 MHz From This Push-Pall Amplifier {The heat sink shown with amplifier Ss sufficient only for short test periods under forced air cooling.} This bulletin supplies sufficient information.to build a


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    PDF 30MHz 30-MHz MRF422, MRF422 EB27A/D I111H Stackpole 57-3238 MPC1000 Toroid 57-9322 57-1845-24b Indiana general ferrite core Stackpole ferrite eb27a stackpole 57-1845-24b EB-27A 300w amplifier 30mhz

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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