2N5486 CHARACTERISTICS Search Results

2N5436

Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS
Contextual Info: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS

2N5465

Abstract: 2N5484-2N5486 2N5464 2N5485 2N5484 2N5486
Contextual Info: 01 E SOLI» STATE ] Eg3fl75Dfil ODllQOg 01E 11002 2N5484-2N5486 3875081 G E SOLID STATE D ocÄMiL 2N5484- 2N5486 N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Up to 400MHz Operation • Economy Packaging • C rss<1.0pF Ta = 25°C unless otherwise specified)

Contextual Info: 2N5484 2N5485 2N5486 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5484, 2N5485, and 2N5486 are silicon N-Channel JFETs designed for RF amplifier and mixer applications. These devices will operate well in the VHF/UHF frequency range.

2N5485

Abstract: 2N5486 2N5484 Field Effect Transistor MRC137 MRC138 power electronic handbook transistors handbook 2n5484 equivalent MRC136
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N5484; 2N5485; 2N5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES

2N5484-2N5486

Abstract: 2NS484
Contextual Info: _ N-Channel JFET High Frequency Amplifier CGHOQIC CORPORATION 2N5484-2N5486 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Up to 400MHz Operation • Economy Packaging • Crss <1 .OpF Drain-Gate Voltage . 25V

Contextual Info: CRO 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Ju n c tio n F ie ld E ffe c t designed T r a n s is to r s . fo r o s c il l a t o r s VHF / UHF and They are a m p lifie r s , analog m ainly m ixers, sw itch e s. ; D B o tto m V ie w S o u rc e & D iain

datasheet 2n5484 jfet

Abstract: 2n5484 equivalent 2N5485 2N5484 2N5486
Contextual Info: N-Channel JFET High Frequency Amplifier CORPORATION 2N5484 – 2N5486 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Up to 400MHz Operation • Economy Packaging • Crss <1.0pF Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

2N5485

Abstract: 2N5484 2N5486
Contextual Info: N-Channel JFET High Frequency Amplifier calodic CORPORATION 2N5484-2N5486 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Up to 400MHz O peration • E cono m y P ackaging • Crss <1.0pF Drain-Gate Voltage .25V

5-486

Abstract: 5484 junction MMBF5485 6B-6M cg100
Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G G S S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching

2N5486G

Abstract: 2N5486
Contextual Info: 2N5486 JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS TJ = 25°C unless otherwise noted Rating Symbol Value Unit Drain −Gate Voltage VDG 25 Vdc Reverse Gate −Source Voltage

2N5486

Abstract: 2N5486 characteristics
Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C

2N5486

Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N−Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain −Gate Voltage Reverse Gate −Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C

2N5484

Abstract: Calogic 2n5484 equivalent 2N5486 DS012 2N5485 1076 2n5485 equivalent CALOGIC LLC
Contextual Info: CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS012 REV B 2N5484 – 2N5486 LLC ELECTRICAL CHARACTERISTICS Continued (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5484 MIN MAX 2N5485 MIN MAX 2.5 NF Noise Figure (Note 2)

2N5486 equivalent

Abstract: 2n5484 equivalent 2N5485 2N5484 2N5486 MRC135
Contextual Info: Philips Semiconductors Product specification N-channel field-effect transistors 2N5484; 2N5485; 2N5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections V ds drain-source voltage • High gain. bss drain current

2N5486

Contextual Info: bL>53^31 00241E5 S31 H A P X Philips Sem iconductors N-channel field-effect transistors 2N5484; 2N5485; 2N5486 N AMER PHILIPS/DISCRETE L.7E ]> QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections • High gain.

2N5485

Abstract: 2N5484 MMBF5485 2N5486 2n5484 equivalent MMBF5484 MMBF5486 transconductance 2N5485 transconductance 2N5486
Contextual Info: MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G D G S TO-92 S SOT-23 D Mark: 6B / 6M / 6H N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

SOT 23 1ft

Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*

2N5484

Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current

2N548

Abstract: 2N5484 transistor 2N548 2n5484 equivalent 2N5486 2n5484 jfet 2N5486 equivalent 112n5484
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifiers 2N5484 2N5486 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 25 Vdc Reverse Gate–Source Voltage VGSR 25 Vdc ID 30 mAdc Forward Gate Current IG f 10 mAdc Total Device Dissipation @ TC = 25°C

2N5486

Abstract: 2N5486 Transistor 2N5485 SMP5485 2N5484 SMP5484 SMP5486
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-22 B-22 01/99 2N5484, 2N5485, 2N5486 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF/UHF Amplifiers Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation

2N5486

Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching

Contextual Info: 2N5486 JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS TJ = 25°C unless otherwise noted Rating Symbol Value Unit Drain −Gate Voltage VDG 25 Vdc Reverse Gate −Source Voltage

TO-226-AE

Abstract: BC108 characteristic JFET BF245 BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C

5485 transistor

Abstract: DATASHEET OF TRANSISTOR 2N5485 MMBF5484 OF TRANSISTOR 2N5485 2N5485 equivalent 2N5484 2N5485 2N5486 CBVK741B019 MMBF5485
Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching