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STMicroelectronics


STMicroelectronics DATAPACK/JANS2N5551UBG - Bulk (Alt: DATAPACK/JANS2N5551UBG)
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Avnet Americas	DATAPACK/JANS2N5551UBG	Bulk		111 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics J2N5551UB1 - Bulk (Alt: J2N5551UB1)
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Avnet Americas	J2N5551UB1	Bulk		111 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics JANS2N5551UBT - Bulk (Alt: JANS2N5551UBT)
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Avnet Americas	JANS2N5551UBT	Bulk		111 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	JANS2N5551UBT			17 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics JANSR2N5551UBG - Bulk (Alt: JANSR2N5551UBG)
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Avnet Americas	JANSR2N5551UBG	Bulk		111 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics DATAPACK/JANSR2N5551UBG - Bulk (Alt: DATAPACK/JANSR2N55)
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Avnet Americas	DATAPACK/JANSR2N5551UBG	Bulk		111 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N5551UB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking code RAD SMD Transistor npn Abstract: JS55 Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate	Original	2N5551HR 2N5551HR MIL-PRF19500 DocID16935 marking code RAD SMD Transistor npn JS55	PDF
RAD SMD MARKING CODE Abstract: 2N5551RUB Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description	Original	2N5551HR 2N5551HR MIL-PRF19500 DocID16935 RAD SMD MARKING CODE 2N5551RUB	PDF
2N5551UB Abstract: package LCC-3 Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL	Original	2N5551HR 2N5551HR 2N5551UB package LCC-3	PDF
2N5551UB Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1 Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1	PDF
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR	PDF