2N5872 PNP Search Results

2N5872

Abstract: 2N5871
Contextual Info: SavantIC Semiconductor Product Specification 2N5871 2N5872 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base

2N5872

Abstract: 2N5871 2N5872 pnp
Contextual Info: Inchange Semiconductor Product Specification 2N5871 2N5872 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base

2N5872

Contextual Info: 2N5872 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5872

Contextual Info: 2N5872 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5872

Contextual Info: 2N5872 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5872

Abstract: 2N5871
Contextual Info: TYPES 2N5871, 2N5872 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5873, 2N5874 • 115 Watts at 25°C Case Temperature • 7-A Rated Continuous Collector Current

BU4060

Abstract: BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D
Contextual Info: CRIMSON S E M I C O N D U C T OR INC DE~| 2 5 1MCHfc. ODDOBBS 2514096 CRIMSON SEMICONDUCTOR INC . 99D 00335 T3S-o/ D EPITAXIAL BASH TO-3 continued NPN PNP 2N 3716 2N 5873 2N 5874 2N5877 2N5878 2N6055 2N 6056 2N 6057 2N 6058 2N 6059 2N3792 2N5871 2N5872 2N 5875

KT835B

Abstract: B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518
Contextual Info: POWER SILICON PNP Item Number Part Number Manufacturer Ic Max A V(BR)CEO Min (V) fT hFE Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) PD Max (W) TOper Max (Oe) Package Style I(C) >= 5 A, (Co nt' d) 5 -10 2SB1224 MJF6107 2N61 06 2N6107 40874 2N6134 B0722 2N5872

MJ480

Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
Contextual Info: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419

fast switching pnp transistor 3A 60V

Abstract: 2N5872 SOLITRON DEVICES
Contextual Info: _ 8 3 6 8 6 0 2 _SOI TT r oni n r v / m r g SOLITRON DEVICES INC tmh TS 95D 02889 DE-J ßBbäbOS ODDEflflT I ÄTTÄ[L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 67 CONTACT METALLIZATION

TIP41/TIP42

Abstract: 2N5872 2N4897 2N4903 2N4906 2N5069 2N5336 2N5337 TIP121 TIP122
Contextual Info: F A IR C H ILD T R A N S IS T O R S POWER POW ER T R A N S IS T O R S BY Icmax, POLARITY A N D A S C E N D IN G VqeO D E V IC E NO. Polarity NPN PNP Item •c = 5.0 A hFE @ ic • A Min/Max VCEO V Max VCE(sat) @ *C V A Max <T MHz Min(Typ) (Cont’d) p D(Max)

2N5684

Abstract: 2N5867 2N5613 PPC 2n5683 2N5678 2N5680 2N5872 2N5615 2n5683 2N5619
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST PNP DEVICE BRIEAKDOV m V O LTAGE s SAT . V O LTA GES M 3 X . hF:E 'c (A) 2.5 Min. Max. 5.5 V CE (V) 5 70 80 5.5 5 2.5 100 80 5.5 5 TO-3 120 100 5.5 2N5621 TO-3 80 60 2N5623 TO-3 100 2N5625 TO-3 2N5627 200

Contextual Info: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

transistor 40411

Abstract: 40411 transistor 40411 2N6258 2N5867 2N5872 2N1487 2N1488 2N1489 2N1490
Contextual Info: •Typ«* PNP Compta- VCBHMtS 1C mmt Votte) M a x hn ic / m VCC(SAT) @IC/H VK le n ¥« IS/fe PD@ @VCf TC-2S°C T - lu e ’ Ir (M in-M ax ®A /V ) (V@ A/A) (*@ a / v) 3.0 @1.5/.3 3.0 @1.5/3 1@1.5/.1 1@1.5/.1 3.2@.8/.08 3.5@1.5/4 3.5 @1.5/4 2.5 @1.5/4

FT317

Abstract: FT317B BD220 FT317A ft410 Fairchild FT317 2N5872 bc323 BD223 transistor TIP42
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q eo Item DEVICE NO. Polarity NPN PNP @ ic VCE(sat) @ ic hFE v CEO V A A V Max Max Min/Max *T MHz Min(Typ) (Cont’d) pD(Max) W Tc=25°C Package No. •c = 4.0 A Max Continuous (Cont’d)

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

Contextual Info: P I ELECTRONICS INC Eb d F | □□MBS'iS OOOOSEb 7 |^*T-3 3-01 COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

Contextual Info: General Transistor Corporation CASE TO-3, TO-39 le MAX = 3-50A V c e o (SUS) = 40-100V PNP Power Transistors NPN Typ. No. conplMMnt W hFE&c/Vc* (mln-màx A/V) VCE(SAT) ©IC/IB (V© A/A) 10 10 10 10 25-90 @1/2 25-90 @1/2 50-150 @ 1/2 50-150 @1/2 1 @4/4

Contextual Info: NEW ENGLAND SEMICONDUCTOR 5T E D • fa5b*m3 0QQQ054 434 « N E S '7 > 3 3 - o / = 3-50A V c E O S U S = 40-1O O V fT = 2-6 MHz PNP TO-3 lc (M A X ) Case 803 Case 804 Type No. NPN Compie* ment VCEO <sus> <V) (M AX) 1C (A) hFE @ IC/VCE {min-max @ A/V) VC£ (SAT)

2N5286

Abstract: 2N540S 2N5867 2N5872 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905
Contextual Info: \ P I ELECTRONICS INC Eb DE | DÜMBSTS □□□□2Eb 7 |^T-3 3-Ot COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

mj 1504 transistor

Abstract: transistor mj 1504 2N5862 MJ 5030 transistor b 1560 mj 1504 2N5680 2N5867 2N4902 2N4903
Contextual Info: ~2~B48352 DIODE TE~£WgISTOR CO INC PNPTO-3 A4 84D D E|EflM fl3SE 0 0 135 D D D D 1 3S D T - fl ¥ ~ DIODE TPi4f\ 515TDR CO. INC. 201) 666-0400 « Telex: 139485 • Outside N Y & NJ area ca ll TO LL FREE 800-526-4581 F A X No. 201*575*5863 Type* NPN Com pJe- VCtO(SUS)

2N4211

Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
Contextual Info: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP

N5408

Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384
Contextual Info: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153