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    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan
    PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    2N6575

    Abstract: 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276
    Text: NE li ENGLAND SEMICONDUCTOR STE D • b S b H li a OQQQQSb SO? « N E S 'T'-B&'O t NPN TO-3 2-50A V ceo sus) = 35*500V fT = 0.2-50 MHz lc ( M A X ) = VBE @ le/VCE (V @ A/V) PD @ TC = 25 °C VCEO le (SUS) (MAX) hFE @ IC/VCE VCE (SAT) @ IC/ IB (V) (A) (min-max @ A/V)


    OCR Scan
    PDF 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 5-500V 2N6575 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276