2N6109 PIN Search Results

2N6109 equivalent

Abstract: 2N6290 2N6109 equivalents transistor 2n6109 MSD6100
Contextual Info: 2N6109, 6290 Complementary Power Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6109 TO-220 Plastic Package 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

2N6109

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

2N6292G

Abstract: 2N6292 equivalents transistor 2n6109 2N6107 2N6109G 2N6111/2n6288 300 watts amplifier circuit diagram pnp power 2N6109 2N6107G
Contextual Info: PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general−purpose amplifier and switching applications. Features

g229

Abstract: 2N6109
Contextual Info: 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0 .9 0 1.15 1.40 3 .7 5 3.88 2.29 2.7 9 2,54

2N6288

Abstract: 2N6292 tic 226 bb 2N6107 2N6109 2N6111 2N6290
Contextual Info: Inchange Semiconductor Product Specification 2N6288 2N6290 2N6292 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ・Power amplifier and switching circuits applications PINNING

2N6107

Abstract: 2N6109 2N6111 2N6288 2N6290 2N6292 2N6109 pin 2N-6107
Contextual Info: SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN

2N6292

Abstract: 2N6288 2N6290 tic 226 bb 2N6107 2N6109 2N6111
Contextual Info: SavantIC Semiconductor Product Specification 2N6288 2N6290 2N6292 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ·Power amplifier and switching circuits applications PINNING PIN

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6290 TO-220 Plastic Package 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR

2N6109

Abstract: 2N6290
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER

2n6288

Abstract: 2n6111
Contextual Info: PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes • • •

2N6109

Abstract: 2N6290
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR

2n6111

Abstract: 2N6107 2n6292 transistor 2N6292 2N6111 pin 2N6109
Contextual Info: ON Semiconductor PNP 2N6107 Complementary Silicon Plastic Power Transistors 2N6109 * . . . designed for use in general−purpose amplifier and switching applications. 2N6111 • DC Current Gain Specified to 7.0 Amperes • • NPN 2N6288 hFE = 30−150 @ IC

2N6292

Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
Contextual Info: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes

1442

Abstract: 2N6109 2N6290
Contextual Info: IL 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN 14.42 9.63 3.56 - 1.15 3.75 2.29 2,54 MAX 16.51

2N6476 JAN

Abstract: 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

2N6180

Abstract: 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

BD278

Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
Contextual Info: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2

A614-Y

Abstract: D13005 1370E B857 d13005c A1012Y 1012Y A1012-Y A614Y 9015B
Contextual Info: RECTRON See Below for Part # SEMICONDUCTOR TECHNICAL SPECIFICATION TO-220 - Power Transistors and Darlingtons TO-220 4 1 2 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector 3 Dimensions in millimeters Electrical Characteristics Ta=25oC Part # 1 Polari ty VCBO

Contextual Info: ADVANCE INFORMATION yi/i/jxi/i/i All inform ation In this d a ta she et Is prelim inary and su b je c t to change. 6/92 N iC ad/N iM H B a tte ry Fast-C harge C ontrollers _ A pplications Battery-P ow ered E quipm ent The M AX712 charges NIMH batteries b y detecting zerovoltage slope, while the MAX713 uses a negative voltageslope detection schem e for N lC ad batteries. Both parts

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

2N6477

Abstract: BD278 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. Py « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

RCA413

Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415