2N6277 EQUIVALENT Search Results

2N6277 equivalent

Abstract: 2N6277 2N6274 2N6277 applications
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

diode cc 3053

Abstract: cc 3053 diode 2N6277 equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2013. MIL-PRF-19500/514D 3 June 2013 SUPERSEDING MIL-PRF-19500/514C 20 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

diode cc 3053

Abstract: 2N6277 equivalent 7827 Transistor transistor 2N6274 2N6274 2N6277 514B14
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 February 2007. * MIL-PRF-19500/514C 20 November 2006 SUPERSEDING MIL-PRF-19500/514B 14 May 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

soc 117a

Abstract: 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3
Contextual Info: Contran [^ ©tUKSTT © Ä¥ÄIL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 79 ¿1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

2N6277 equivalent

Abstract: Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279
Contextual Info: SOLITRO N DEVICES INC TS DEyfl3bflb0a OOOSfiS^ Q f ° [FIEiODOJ ? ©ATM. ® Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 79) CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

b2045

Abstract: b2045 aka Single Schottky diode b2045 MBR2045CT equivalent b2045AKA mbr2045ct 2N6277 equivalent diode mbr2045ct SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage

b2045

Abstract: b2045 aka Single Schottky diode b2045 2N6277 equivalent B2045 diode mbr2045ct MBR2045CT equivalent diode mbr2045ct SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage

BR2045CT

Abstract: b2045 B2045 motorola BR2035CT B2045* Motorola B2035 Single Schottky diode b2045 MBR2035CT MBR2045CT equivalent
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

diode b1035

Abstract: B1035 b1045 diode B1045 TO-220 b1045 diode b1045 B1045 equivalent 2N6277 equivalent
Contextual Info: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • • • • Guardring for Stress Protection

mbr1045

Abstract: 2N6277 equivalent MBR1035 MBR1035G
Contextual Info: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers The MBR1035/45 uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features •

b2045

Abstract: B2035 B2045 motorola MBR2045CT equivalent MBR2035CT B2045* Motorola rectifier 300 amp 1N5817 2N2222 2N6277
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

MBR2045CTG

Abstract: MBR2045CT equivalent MBR2045CT 1N5817 2N2222 2N6277
Contextual Info: MBR2045CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*

b2045

Abstract: Single Schottky diode b2045
Contextual Info: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage

b1045 diode

Abstract: B1045 diode b1035 B1035 Motorola B1045 diode b1045 2N2222 motorola 1N5817 2N2222 2N6277
Contextual Info: MOTOROLA Order this document by MBR1035/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR1035 MBR1045 . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

1N5817

Abstract: 2N6277 MBR1035 MBR1035G MBR1045 MBR1045G
Contextual Info: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers The MBR1035/45 uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features •

2N2222

Abstract: MBR2045CTG 2n6277 pin out diagram
Contextual Info: MBR2045CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*

MBR2045G

Abstract: MBR2045 equivalent 2N2222 MBR2045
Contextual Info: MBR2045CT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • http://onsemi.com Guardring for Stress Protection Low Forward Voltage

b2045

Abstract: b2045 aka b2045AKA Single Schottky diode b2045 diode mbr2045ct 1N5817 2N2222 2N6277 MBR2045CT
Contextual Info: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage

MBR2045G

Abstract: MBR2045CTG MBR2045 equivalent 1N5817 2N2222 2N6277 MBR2045 MBR2045CT
Contextual Info: MBR2045CT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • http://onsemi.com Guardring for Stress Protection Low Forward Voltage

MBR1035 MBR1045

Abstract: 2N2222
Contextual Info: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers The MBR1035/45 uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features •

B1045 TO-220

Abstract: B1045 B1035 diode b1035 b1045 diode diode b1045 MBR1035 B1045-1 2N2222 2N6277
Contextual Info: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection

B2045G

Abstract: B2045
Contextual Info: MBR2045CT, MBRF2045CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*