2N6497 D Search Results

2N6497

Abstract: SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A

2N6497

Abstract: 1N5825 2N6498 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated

Contextual Info: £ Z T SGS-THOMSON ^7# 2N6497 2N6498-2N6499 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package particularly intended for switch-mode applications. ABSOLUTE MAXIMUM RATINGS

Contextual Info: m 2N6497 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. MAXIMUM RATINGS 5.0 A 10 A PEAK 2.0 A lc Ib 250 V V ce 80 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C

LB 137 transistor

Contextual Info: 2N6497 SILICON NPN POWER TRANSISTOR PACKAGE STYLE TO - 220AB DESCRIPTION: DIMENSIONS The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. mm min MAXIMUM RATINGS 5.O A 1O A PEAK le |b 2.O A VeE 25O V Pd i s s Tj 8O W @ Te " 25 0C

Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

2N6497

Contextual Info: SavantIC Semiconductor Product Specification 2N6497 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

2N6497 D

Abstract: 10 amp npn power transistors AMP contact assembly 2N6497 1N5825 2N6497G MSD6100
Contextual Info: 2N6497 High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. http://onsemi.com Features

2N6498

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N6497/D 2N6497 2N6498* High Voltage NPN S ilico n Pow er Tran sistors ’ M otorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line-operated

Contextual Info: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

MJE13009

Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
Contextual Info: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530

Contextual Info: QQgcm P5 s • H ~ - 3 3 - \ 3 r z 7 ^ 7 S C S -TH H O O M M S O N s [ L ir a » ! ! # S 6 S-THOMSON 2N 6497 2 N 6 4 9 8 -2 N 6 4 9 9 30E T> HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package

2N6488 MOTOROLA

Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —

2N6497

Abstract: 2N6499 2N6498
Contextual Info: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce

BD699

Abstract: BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698
Contextual Info: N PN PN P l e = 3.0 A. 2N4921 2N4918 v C EO V olts Hf e @ 'c Am p V C E sat @ 'C V o lts Am p fT MHz PD Watts Case 40 20/100 0.5 0.6 1.0 3.0 30 77 M JE 3 1 M JE 3 2 40 25/- 1.0 1.2 3.0 3.0 40 77R BD 17 5 BD 17 6 45 15/— 1.0 0.8 1.0 3.0 30 77 BD 57 5 BD 5 7 6

mj150* darlington

Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Contextual Info: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25

power transistors cross reference

Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9