2N6661 SILICONIX Search Results

m2017

Abstract: M1042 2N6661-2 M1051 m2017a 6863-2
Contextual Info: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω

part marking information vishay HD 1

Contextual Info: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω

2N6661-2

Abstract: M1042
Contextual Info: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω

JANTXV2N6661

Abstract: JANTX2N6661 JANTXV2N6661P JANTX2N6661 reliability
Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

part marking information vishay HD 1

Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

jantx2n6661

Abstract: JANTX2N6661 reliability
Contextual Info: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS

TO-205AD

Abstract: 2N6661 VN88AFD
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V (B R )D SS M i n 0 0 2N6661 90 4 @ V GS= 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 1 0 V 0.8 to 2.5 1.29 ro s ( o n ) Max (fì) V G S (th ) b (A) (V) FEATURES

2N666I

Contextual Info: Tem ic 2N6661/VN88AFD Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) fDS(on) Max (fi) V GS(th) (Y ) I d (A) ï: ; 2N6661 90 4 @ VGs = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 10 V 0.8 to 2.5 1.29 Features Benefits

vn88afd

Abstract: 2N6661 2N6661S
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

VN88AFD

Abstract: N-CHANNEL MOSFET 2N6661
Contextual Info: 2N6661/VN88AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications

2N6661

Abstract: 2N6661 Siliconix VN88AFD marking code vishay SILICONIX to-39
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D

88AFD

Contextual Info: Tem ic 2N6661/VN88AFD Se c o n du c t o r s it i N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR DSS Min (V ) rus< on) M a x ( f i ) V g S(Ui ) (V ) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 I d (A ) 0.9 VN 88AFD 80 4 @ VGs = 10 V

VN66AF equivalent

Abstract: sony 2sj54 2N6658 buz 350 equivalent CROSS REFERENCE VN99AB VN66AF vn99ab VN0108N2 VN46AF IRF232
Contextual Info: Siliconix 1-1? f l oa < 2N6661 • VN99AB ■ VN90AB B S ilic o n ix 90V MOSPOWER These pow er F E T s are design ed e sp e c ia lly for low pow er high frequency inverters, interface to C M O S and TTL logic, and line drivers. FEATURES liw v K1ÄÄÄ4 I ■

VN66AF equivalent

Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf542 equivalent

Abstract: 2N6658 equivalent IRF640 FI IRF540 irf540 equivalent VN0108N2 2N865 CROSS REFERENCE 2n6661 VN46 IRF232
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

0808M

Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Contextual Info: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

mospower cross vn66af

Abstract: VN66AF equivalent 2N6658 IRF540 2SJ54 BUZ44 irf540 equivalent VN0400 BUZ24 IRF232
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

VN90AB

Abstract: 2N6658 VN67AF equivalent 2n6659 equivalent 2SK173 BUZ 20 BUZ33 VN46AF equivalent VN67AF cross reference IRF240
Contextual Info: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

2N6658

Abstract: siemens LFL 1 635 IRF540 mospower cross vn66af VN64GA BUZ23 SIEMENS IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100