2N6766 JANTX Search Results

Contextual Info: 2N6764, 2N6766, 2N6768 and 2N6770 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also

DD 127 D TRANSISTOR

Abstract: 2N6764 JANTX transistor DD 127 D 2N6764 2n6766 2N6770 T4-LDS-0101 2n6768 2N6770 JANTX clare dss3
Contextual Info: 2N6764, 2N6766, 2N6768 and 2N6770 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also

2N6764 JANTX

Abstract: 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770
Contextual Info: 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor

2N6765

Contextual Info: POWER MOSFET TRANSISTORS , JTX JTXVS 200 Volt, 0.085 Ohm N-Channel J, JTX, JTXV 2N6766 FEATURES DESCRIPTION • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosmm and a high transconductance.

Contextual Info: 2N6766+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

Contextual Info: 2N6766+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

2N6166

Abstract: 2N6766 JANTX 2N6766 2N6765 y160
Contextual Info: Standard Power MOSFETs 2N6765, 2N6766 File N u m be r 1591 Power MOS Field-Ef fect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 25 A and 30 A, 150 V and 200 V rosiom = 0.085 O and 0.12 Cl Features: • SOA is powgr-dissipation limited

2N6766

Abstract: 2N6766 JANTX 2N6765
Contextual Info: HE 0 § 4055455 GQQTBSS Ô | Data Sheet No. PD-9.338D INTERNATIONAL R E C T I F I E R INTERNATIONAL. RECTIFIER I«R T-39-13 HEXFETTRANSISTGRS JANTXV2N676B *JAIMTXSI\I6766 JEDEC REGISTERED N-CHAIMIMEL POWER MQSFETs SNG766 5N 6765 ‘ QUALIFIED TO MIL-S-19500/543

mosfet 543l datasheet

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2N6766 JANTX 2N6770 2N6770T1 2N6764 2N6764T1 2N6766 2N6768 2N6764 JANTX
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 August 2010. MIL-PRF-19500/543L 17 May 2010 SUPERSEDING MIL-PRF-19500/543K 9 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON

2N6766 JANTX

Contextual Info: U N I TR OD E CORP 9347963 92D U N I T R O D E CORP D 10512 POWER MOSFET TRANSISTORS J JTXiJTXVS 200 Volt, 0.085 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R d s io h i and a high transconductance.

2n6768

Abstract: 2n6770
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 April 2013. MIL-PRF-19500/543N 29 March 2013 SUPERSEDING MIL-PRF-19500/543M 22 September 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON

2N6770 JANTXV

Abstract: 2N6764 JANTX 2N6764 2N6766 2N6768 2N6770 JANTXVHCA2N6766
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2001. MIL-PRF-19500/543F 7 September 2001 SUPERSEDING MIL-PRF-19500/543E 5 August 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON

2N6766

Abstract: 2N6770T1 2N6764 2N6764T1 2N6768 2N6770 160V 30A TRANSISTOR
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

2N6764

Abstract: 2N6764 JANTX T4-LDS-0101 2N6764T1 2N6766 2N6768 2N6770 2N6770T1
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

2N6770T1

Abstract: 2N6764 2N6764T1 2N6766 2N6768 2N6770
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

2N6764

Abstract: 2N6764T1 2N6766 2N6768 2N6770 2N6770T1
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET

Contextual Info: International Government and Space ïO R lR e c t if ie r HEXFET Power MOSFETs Hermetic Package N-Channel Part bvd ss Number V IRF034 IRF044 IRF054 60 60 RDS(on) (Ohms) lD@ T „ = 25°C c (»> 0.500 0.280 25 44 Iq@ TC = 100°C R thJC Max. Pd @ Tq = 25°C

DD 127 D transistor

Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

DD 127 D transistor

Abstract: T4-LDS-0101-1
Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are