2N6849 MOSFET Search Results

DD 127 D transistor

Abstract: 2N6849
Contextual Info: 2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a low profile U surface mount package.

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

MOSFET

Abstract: 2N6849
Contextual Info: <£iuni- loneLuikot ZPioauott., Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6849 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL POWER MOSFETs VDSS 'D(cont) / / -'- f \ I <« T «

Contextual Info: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N6849 JANS

Abstract: 2n6849 jantxv 2N6849 p-channel MOSFET 100V
Contextual Info: 2N6849 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

DIODE 65A

Abstract: 2N6849
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2n6849

Abstract: TO-205AF Package 2n6849 mosfet irff9130
Contextual Info: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2n6849 mosfet

Abstract: 2N6849 2N6849 JANTX 80v P-Channel MOSFET 2n6849u ADC 0803 datasheet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6849

Abstract: L1725
Contextual Info: 2N6849 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFETs 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 VDSS

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

2N6849

Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
Contextual Info: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds

Contextual Info: 2N6849+JANTXV Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ

2N6849

Contextual Info: 2N6849 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -6.5 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET

2N6849

Abstract: W41A
Contextual Info: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: 2N6849+JANS Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ

2N6849

Abstract: 2n6849 mosfet
Contextual Info: 2N6849 23 HARRIS Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u s t 19 91 Features Package T0 -20 5A F BOTTOM VIEW 4 ftr •m -bCCA .5 A , -lU U tll V • rDS on = 0 .3 0 n • Single Pulse Avalanche Energy Rated SOURCE • S O A is P ow er-D issip atio n Lim ited

L1725

Abstract: 2N6849
Contextual Info: SEME 2N6849 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFETs 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) VDSS ID(cont) RDS(on) 5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 )  ! 2 .5 4 (0 .1 0 0 )

Contextual Info: •I 4302271 ^ h a 0DS4MTS r r 1Û5 ■ HAS 2N6849 i s Avalanche-Energy-Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • - 6 .5 A , - 1 OOV * rDS on = 0.30H • S in g le P u ls e A v a la n c h e E n e rg y R a te d

2N6849

Contextual Info: SEME 2N6849 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFETs 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) VDSS ID(cont) RDS(on) 5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 )  ! 2 .5 4 (0 .1 0 0 )

transistor 564H

Abstract: 2n6849 jantxv JANHCA2N6849 2N6849 2N6849U 2N6849 JANTX 2N6849 JANS 2N6851 2N6849 datasheet IRFF9232
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 September 2009. MIL-PRF-19500/564H 2 June 2009 SUPERSEDING MIL-PRF-19500/564G 13 June 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,

Contextual Info: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also

DD 127 D TRANSISTOR

Abstract: transistor DD 127 D 2N6849 2N6849 JANTX u18 transistor
Contextual Info: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also

JANTX2N6845

Contextual Info: Government and Space International HEXFET Power MOSFETs lI O R B e c t if ie r Hermetic Package P-Channel Part Number BVpss V RDS(on) (Ohms) •d @ Tc = 25-C lD@ Tc = 100"C (A) (A) RthJC Max. (K/W) Pd@ TC= 25°C (W) IRFF9024 -60 0.28 -6.4 -4.1 6.25 20 IRFF9110

IRF024

Abstract: 2N6845 IRF035 33MIL
Contextual Info: International Í^ R ÍF W 4 Íf¡ÖT HEXFFT n C A rC I ^ r ie u m ie r un Power MOSFETs Hermetic Package TO-39 N-Channel Part Number Vos Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 -80