2N6903 JANTX
Abstract: No abstract text available
Text: 2N6903+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)10 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)8.33 Minimum Operating Temp (øC)-55õ
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2N6903
Junc-Case15
2N6903 JANTX
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2N6903 JANTX
Abstract: 2N6903
Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 April 2009. MIL-PRF-19500/570D 11 January 2009 SUPERSEDING MIL-PRF-19500/570C 17 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,
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MIL-PRF-19500/570D
MIL-PRF-19500/570C
2N6901
2N6903,
MIL-PRF-19500.
2N6903 JANTX
2N6903
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2N6901
Abstract: 2N6901 JANTX 2N6903 2N6903 JANTX mos die 2N6901 JANTXV
Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/570E 26 August 2010 SUPERSEDING MIL-PRF-19500/570D 11 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,
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MIL-PRF-19500/570E
MIL-PRF-19500/570D
2N6901
2N6903,
MIL-PRF-19500.
2N6901 JANTX
2N6903
2N6903 JANTX
mos die
2N6901 JANTXV
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QPL-19500
Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits
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2N6903
2N6903
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
QPL-19500
2n6901
2N6758 JANTX
2N6903 JANTX
2N6898 JANTX
2N6898
2N6756
2N6758
2N6760
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2N6903
Abstract: 92CS-4C745 SC12N
Text: 2N6903 g HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors (L2FET F e a tu re s P a ck a g e T 0 -2 0 5 A F • 0.9 8A , 2 0 0 V B O TTO M VIEW • rD S(on) = 3 .6 5 H • Design O p tim ized fo r 5V G ate Drive • Can b e D riven Directly from Q M O S, NM O S, TT L Circuits
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2N6903
2N6903
92CS-4C745
SC12N
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lts 542
Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds
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2N6790
92cs-3374i
2N6790
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
lts 542
LTS 543
LTS 542 INTERNAL DIAGRAM
2N6756
LH0063
QPL-19500
TRANSISTOR C 557 B
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2n5764
Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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2N6763,
2N6764
0V-100V
2N6763
2N6764
2N6796
O-2I35AF
2n5764
2N6764 JANTXV
2N6764 JANTX
2N6164
2N6901
25C31
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2N6898 JANTX
Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds
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2N6898
2N6898
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898 JANTX
2N6898 JANTXV
TRANSISTOR C 557 B
QPL-19500
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2N6794
Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds
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2N6794
2N6794
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6794 JANTX
fllnm 80
3v 4 channal relay
fllnm
qpl-19500
LH0063
TRANSISTOR C 557 B
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6796 IR
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6782
2N6782
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
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2N6770
Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited
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2N6769,
2N6770
50V-500V
2N6769
2N6770
2N6796
O-2I35AF
O-205AF
2N6800
2N6770 JANTXV
2N6770 JANTX
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2N6760
Abstract: 2N6898 2N67 2N6759
Text: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds
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2N6759,
2N6760
2N6759
2N6760
TQ-204AA
2N6796
O-2I35AF
O-205AF
2N6800
2N6898
2N67
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2N6895 JANTXV
Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds
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2N6895
2N689S
2N6895
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6895 JANTXV
qpl-19500
TRANSISTOR C 557 B
2N6898
2N6901
2N6756 JANTX
40722
2N6800 JANTX
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2N6898
Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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2N6897
2N6897
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898
36485
2N6798
TRANSISTOR C 557 B
2N6901
IDM30
2N6904
qpl-19500
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2N6758
Abstract: 2N6902 QPL-19500
Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,
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2N6902
92cs-3374i
2N6902
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6758
QPL-19500
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2n6798 jantx
Abstract: 2N6798 IH0063 2N6756 QPL-19500
Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited
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2N6798
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2n6798 jantx
IH0063
2N6756
QPL-19500
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2N6792 JANTX
Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds
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2N6792
2N6792
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6792 JANTX
C055
LH0063
QPL-19500
2N6904
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qpl-19500
Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
Text: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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2N6896
2N6896
T0-204AA
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
qpl-19500
TRANSISTOR C 557 B
2N6898
40716
2N6897 JANTXV
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2N7119
Abstract: 2N7122 2N7121 2N6967 2N7243 2N724 2N6966 2N7123 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242
Text: HARRIS SEMICOND SECTOR SbE T> • 430EE71 QÜ42235 ‘ìbb H H A S Military Power Products MOSFETs M ilitary Pow er Products Military and aerospace requirements for high—reliability solid-state devices are extremely large and diverse, not only in terms of performance, operating conditions, and
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430EE71
QG42235
TC5-204AA
2N7120
T0-204AA
2N7121
2N7122
2N7123
2N7119
2N6967
2N7243
2N724
2N6966
JANTX LTPD FOR LOT AND SCREENING DEVICES
2N7242
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field-effect transistors
Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .
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2N6901
2N6902
2N6903
2N6904
RFL1N08L,
RFL1N10L
RFL1N12L,
RFL1N15L
RFL1N18L,
RFL1N20L
field-effect transistors
05LSM
RFP8N18L
RFP25N06L
transistors
field-effect transistor
RFP14N05L
M 615 transistor
transistor 684
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2N6784
Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds
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2N6784
2N6784
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
2sC 1906 transistor
2N6784 JANTX
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2N6851
Abstract: 2N6851 JANTX 2n6800
Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d
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2N6851
-200V
cs-43
2N6851
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6851 JANTX
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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