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    2N6903 JANTX

    Abstract: No abstract text available
    Text: 2N6903+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)10 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)8.33 Minimum Operating Temp (øC)-55õ


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    PDF 2N6903 Junc-Case15 2N6903 JANTX

    2N6903 JANTX

    Abstract: 2N6903
    Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 April 2009. MIL-PRF-19500/570D 11 January 2009 SUPERSEDING MIL-PRF-19500/570C 17 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,


    Original
    PDF MIL-PRF-19500/570D MIL-PRF-19500/570C 2N6901 2N6903, MIL-PRF-19500. 2N6903 JANTX 2N6903

    2N6901

    Abstract: 2N6901 JANTX 2N6903 2N6903 JANTX mos die 2N6901 JANTXV
    Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/570E 26 August 2010 SUPERSEDING MIL-PRF-19500/570D 11 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,


    Original
    PDF MIL-PRF-19500/570E MIL-PRF-19500/570D 2N6901 2N6903, MIL-PRF-19500. 2N6901 JANTX 2N6903 2N6903 JANTX mos die 2N6901 JANTXV

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


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    PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan
    PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


    OCR Scan
    PDF 2N6901 2N6901 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6901 JANTX 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2N6897 JANTXV 2N6897

    2N6155

    Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited


    OCR Scan
    PDF 2N6755, 2N6756 0V-100V 2N6755 2N6756 2N6796 O-2I35AF O-205AF 2N6800 2N6155 2n6156 qpl-19500 2N6901 D-05N md-141 2N67 2N6756 JANTX

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan
    PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


    OCR Scan
    PDF 2N6794 2N6794 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR

    2N6851

    Abstract: 2N6851 JANTX 2n6800
    Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d


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    PDF 2N6851 -200V cs-43 2N6851 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6851 JANTX

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan
    PDF 2N6897 2N6897 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 36485 2N6798 TRANSISTOR C 557 B 2N6901 IDM30 2N6904 qpl-19500

    2N6758

    Abstract: 2N6902 QPL-19500
    Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan
    PDF 2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500

    transistor 65 C 3549

    Abstract: 2N6800 2N6756 LH0063 QPL-19500 ICI 555
    Text: Standard Power MOSFETs File N u m b e r 2N6800 1904 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V f D S o n = 1 Q N -C H A N N E L E N H A N C E M E N T M OD E D Features: • m m m m SOA is pow er-dissipation lim ited


    OCR Scan
    PDF 2N6800 2N6800 2N6796 O-2I35AF O-205AF T0-205AF 2N6802 MIL-S-19500/ transistor 65 C 3549 2N6756 LH0063 QPL-19500 ICI 555

    2N6768

    Abstract: 2N6768 JANTX 2N6767
    Text: Standard Power M O S F E T s_ 2N6767, 2N6768 File N u m b e r 1898 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 350V - 400V rDS om = 0.4Q and 0.30


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    PDF 2N6767, 2N6768 2N6767 2N6768 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6768 JANTX

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan
    PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan
    PDF 2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904

    mosfet 2n6788

    Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
    Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan
    PDF 2N6788 2N6788 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ mosfet 2n6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan
    PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    2N6901

    Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited


    OCR Scan
    PDF 2N6802 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF MIL-S-19500/ 2N6901 mosfet 2n6788 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500

    2N6166

    Abstract: 2N6766 JANTX 2N6766 2N6765 y160
    Text: Standard Power MOSFETs 2N6765, 2N6766 File N u m be r 1591 Power MOS Field-Ef fect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 25 A and 30 A, 150 V and 200 V rosiom = 0.085 O and 0.12 Cl Features: • SOA is powgr-dissipation limited


    OCR Scan
    PDF 2N6765, 2N6766 2N6765 2N6766 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6166 2N6766 JANTX y160

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


    OCR Scan
    PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX

    qpl-19500

    Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
    Text: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan
    PDF 2N6896 2N6896 T0-204AA 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF qpl-19500 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV

    2N6758

    Abstract: 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6757 2N6758 JANTX
    Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited


    OCR Scan
    PDF 2N6757, 2N6758 50V-200V 2N6757 2N6758 2N6796 O-2I35AF O-205AF 2N6800 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6758 JANTX

    2N6895 JANTXV

    Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
    Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds


    OCR Scan
    PDF 2N6895 2N689S 2N6895 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6895 JANTXV qpl-19500 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX