2N6903 JANTX
Abstract: No abstract text available
Text: 2N6903+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)10 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)8.33 Minimum Operating Temp (øC)-55õ
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2N6903
Junc-Case15
2N6903 JANTX
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2N6903 JANTX
Abstract: 2N6903
Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 April 2009. MIL-PRF-19500/570D 11 January 2009 SUPERSEDING MIL-PRF-19500/570C 17 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,
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MIL-PRF-19500/570D
MIL-PRF-19500/570C
2N6901
2N6903,
MIL-PRF-19500.
2N6903 JANTX
2N6903
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2N6901
Abstract: 2N6901 JANTX 2N6903 2N6903 JANTX mos die 2N6901 JANTXV
Text: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/570E 26 August 2010 SUPERSEDING MIL-PRF-19500/570D 11 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,
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MIL-PRF-19500/570E
MIL-PRF-19500/570D
2N6901
2N6903,
MIL-PRF-19500.
2N6901 JANTX
2N6903
2N6903 JANTX
mos die
2N6901 JANTXV
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QPL-19500
Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits
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OCR Scan
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2N6903
2N6903
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
QPL-19500
2n6901
2N6758 JANTX
2N6903 JANTX
2N6898 JANTX
2N6898
2N6756
2N6758
2N6760
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2N6898 JANTX
Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds
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OCR Scan
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2N6898
2N6898
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898 JANTX
2N6898 JANTXV
TRANSISTOR C 557 B
QPL-19500
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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OCR Scan
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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2N6155
Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited
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OCR Scan
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2N6755,
2N6756
0V-100V
2N6755
2N6756
2N6796
O-2I35AF
O-205AF
2N6800
2N6155
2n6156
qpl-19500
2N6901
D-05N
md-141
2N67
2N6756 JANTX
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2n5764
Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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OCR Scan
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2N6763,
2N6764
0V-100V
2N6763
2N6764
2N6796
O-2I35AF
2n5764
2N6764 JANTXV
2N6764 JANTX
2N6164
2N6901
25C31
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2N6794
Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds
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OCR Scan
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2N6794
2N6794
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6794 JANTX
fllnm 80
3v 4 channal relay
fllnm
qpl-19500
LH0063
TRANSISTOR C 557 B
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6796 IR
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2N6851
Abstract: 2N6851 JANTX 2n6800
Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d
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OCR Scan
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2N6851
-200V
cs-43
2N6851
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6851 JANTX
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2N6898
Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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OCR Scan
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2N6897
2N6897
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898
36485
2N6798
TRANSISTOR C 557 B
2N6901
IDM30
2N6904
qpl-19500
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2N6758
Abstract: 2N6902 QPL-19500
Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,
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OCR Scan
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2N6902
92cs-3374i
2N6902
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6758
QPL-19500
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transistor 65 C 3549
Abstract: 2N6800 2N6756 LH0063 QPL-19500 ICI 555
Text: Standard Power MOSFETs File N u m b e r 2N6800 1904 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V f D S o n = 1 Q N -C H A N N E L E N H A N C E M E N T M OD E D Features: • m m m m SOA is pow er-dissipation lim ited
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OCR Scan
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2N6800
2N6800
2N6796
O-2I35AF
O-205AF
T0-205AF
2N6802
MIL-S-19500/
transistor 65 C 3549
2N6756
LH0063
QPL-19500
ICI 555
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2N6768
Abstract: 2N6768 JANTX 2N6767
Text: Standard Power M O S F E T s_ 2N6767, 2N6768 File N u m b e r 1898 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 350V - 400V rDS om = 0.4Q and 0.30
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2N6767,
2N6768
2N6767
2N6768
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6768 JANTX
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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OCR Scan
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PDF
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2N6782
2N6782
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
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2N6792 JANTX
Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds
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OCR Scan
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PDF
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2N6792
2N6792
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6792 JANTX
C055
LH0063
QPL-19500
2N6904
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mosfet 2n6788
Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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OCR Scan
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PDF
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2N6788
2N6788
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
mosfet 2n6788
LH0063
QPL-19500
2N6792 JANTXV
2N6788 JANTXV
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lts 542
Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds
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OCR Scan
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2N6790
92cs-3374i
2N6790
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
lts 542
LTS 543
LTS 542 INTERNAL DIAGRAM
2N6756
LH0063
QPL-19500
TRANSISTOR C 557 B
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2N6901
Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited
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OCR Scan
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PDF
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2N6802
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
MIL-S-19500/
2N6901
mosfet 2n6788
metal detector WITH IC 555
550D
2N6756
LH0063
QPL-19500
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2N6166
Abstract: 2N6766 JANTX 2N6766 2N6765 y160
Text: Standard Power MOSFETs 2N6765, 2N6766 File N u m be r 1591 Power MOS Field-Ef fect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 25 A and 30 A, 150 V and 200 V rosiom = 0.085 O and 0.12 Cl Features: • SOA is powgr-dissipation limited
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OCR Scan
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PDF
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2N6765,
2N6766
2N6765
2N6766
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6166
2N6766 JANTX
y160
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2N6770
Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited
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OCR Scan
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PDF
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2N6769,
2N6770
50V-500V
2N6769
2N6770
2N6796
O-2I35AF
O-205AF
2N6800
2N6770 JANTXV
2N6770 JANTX
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qpl-19500
Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
Text: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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OCR Scan
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PDF
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2N6896
2N6896
T0-204AA
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
qpl-19500
TRANSISTOR C 557 B
2N6898
40716
2N6897 JANTXV
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2N6758
Abstract: 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6757 2N6758 JANTX
Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited
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OCR Scan
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PDF
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2N6757,
2N6758
50V-200V
2N6757
2N6758
2N6796
O-2I35AF
O-205AF
2N6800
2N677
2N6766 JANTX
mosfet 2n6788
qpl-19500
2N67
2N6756
2N6758 JANTX
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2N6895 JANTXV
Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
Text: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds
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OCR Scan
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PDF
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2N6895
2N689S
2N6895
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6895 JANTXV
qpl-19500
TRANSISTOR C 557 B
2N6898
2N6901
2N6756 JANTX
40722
2N6800 JANTX
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