2N7000 FET Search Results

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

2n7000

Abstract: siemens fet to92 fet to92
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

D 92 M 03 DIODE

Abstract: 2n7000 4W-25 fet 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

2N7000

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2n7000 equivalent

Abstract: equivalent of 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N7000 circuits

Abstract: 125OC 2N7000 2N7000-G 2n7000g
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling

2N7000 TO-92

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

TO-92 Package Dimensions diode inc

Abstract: 2N7000 125OC 2N7000-G transistor 2n7000 2n7000g
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2n7000 motorola

Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

2N7000 MOTOROLA

Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 5.0Q. 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

BC237

Abstract: 2N7000 Fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR

fet 2n7000

Abstract: 2N7000
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000 ISSUE 2– NOVEMBER 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 60 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.5 A Gate Source Vootage

2N7002U

Abstract: 2N7000 021
Contextual Info: WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSOLUTE MAXIMUM RATINGS Ta - +25°C unless otherwise noted (TO-92 Package) • High Gate Oxide Breakdown, +40V min. ■ Low Output and Transfer Capacitances ■ Extended Safe Operating Area

fairchild 2N7002 MARKING

Abstract: 2N7000-D nds7000
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

Contextual Info: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs RdS ON (max) I d(ON) (min) 60V 5£2 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

2N7000 021

Abstract: 25c021
Contextual Info: TELEDYNE COMPONENTS 3hE D fic117b02 00077^2 1 «TSC 'T Z S Z g WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSO LUTE MAXIMUM RATINGS _ _ . • High Gate Oxide Breakdown, ±40V min. ■ Low Output and Transfer Capacitances

Topaz Semiconductor

Abstract: TO226AA 2n7000 sseb 2N700 52BL
Contextual Info: TOPAZ SEMICONDUCTOR OSE D g TüôSSEb □□□QTflS G | “* SEMICONDUCTOR T-29-25 2N7000 N-CHANNEL ENHANCEMENT-MODE D-MOS POW m FETs ORDERING INFORMATION TO-226AA TO-92 Plastic Package 2N700Û Description 60V, 5 ohm FEATURES APPLICATIONS • High Gate Oxide Breakdown, +40V min.

Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il