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    2N7002L Price and Stock

    onsemi 2N7002LT1G

    MOSFET N-CH 60V 115MA SOT23-3
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    DigiKey 2N7002LT1G Digi-Reel 298,010 1
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    onsemi 2N7002L

    MOSFET N-CH 60V 115MA SOT23-3
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    DigiKey 2N7002L Digi-Reel 47,351 1
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    onsemi 2N7002LT7G

    MOSFET N-CH 60V 115MA SOT23-3
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    onsemi 2N7002LT3G

    MOSFET N-CH 60V 115MA SOT23-3
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    onsemi 2N7002LT7H

    MOSFET N-CH 60V 115MA SOT23-3
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    2N7002L Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002L Motorola MOSFET, 60V, 115mA Small Signal MOSFET, SOT-23 Original PDF
    2N7002L On Semiconductor Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Original PDF
    2N7002L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N7002L6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300MA SOT-23 Original PDF
    2N7002L6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 300MA SOT-23 Original PDF
    2N7002_L99Z Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002L-AE3-R Unisonic Technologies N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002LT1 Leshan Radio Company Small Signal MOSFET 115 mAmps, 60 Volts Original PDF
    2N7002LT1 On Semiconductor Small signal MOSFET 60 V, 115 mA, N-channel. Original PDF
    2N7002LT1 On Semiconductor Small Signal MOSFET 115 mA, 60 V N-Channel SOT-23 Original PDF
    2N7002LT1 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    2N7002LT1 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    2N7002LT1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N7002LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, TMOS FET, N Channel, 500mA, 100V, Pkg Style SOT23 Scan PDF
    2N7002LT1 Transys Electronics MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Scan PDF
    2N7002LT1 Transys Electronics N-CHANNEL ENHANCEMENT Scan PDF
    2N7002LT1-D On Semiconductor Small Signal MOSFET 115 mAmps, 60 Volts N-Channel Original PDF
    2N7002LT1G On Semiconductor Small signal MOSFET 60 V, 115 mA, N-channel. Original PDF
    2N7002LT1H On Semiconductor 2N7002 - TRANSISTOR 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN, FET General Purpose Small Signal Original PDF
    2N7002LT3 Leshan Radio Company Small Signal MOSFET 115 mAmps, 60 Volts Original PDF

    2N7002L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002L

    Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60


    Original
    PDF 2N7002L OT-23 2N7002L/D 2N7002L 2N7002LT3G 2N7002LT1G 2N7002LT3H

    2N7002LT1

    Abstract: 702 TRANSISTOR sot-23 2N7002LT1 Motorola 702 surface mount transistor
    Text: MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc


    Original
    PDF 2N7002LT1/D 2N7002LT1 236AB) 2N7002LT1 702 TRANSISTOR sot-23 2N7002LT1 Motorola 702 surface mount transistor

    Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

    Abstract: 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW VDGR 60


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    PDF 2N7002L OT-23 2N7002L/D Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 2N7002LT1G 2N7002LT3G 2N7002L 2N7002LT1 2N7002LT3 sot-23 MARKING CODE 70.2 2N7002L-D marking code 702 SOT23

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


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    PDF 2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237

    Untitled

    Abstract: No abstract text available
    Text: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF 2N7002L, 2V7002L OT-23 AEC-Q101 2V7002L) 2N7002L/D

    2V7002LT1G

    Abstract: No abstract text available
    Text: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF 2N7002L, 2V7002L OT-23 2N7002L/D 2V7002LT1G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA, N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF 2N7002LL 115mA, 2N7002LL OT-23-3 O-236) 2N7002LLG-AE2-R QW-R502-284

    sot-23 MARKING CODE 70.2

    Abstract: 2N7002LT1 702 sot-23 2N7002LT3 mst 702 sot-23 702 marking 702 sot-23 Sot-23 MARKING 702
    Text: 2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.)


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    PDF 2N7002LT1 r14525 2N7002LT1/D sot-23 MARKING CODE 70.2 2N7002LT1 702 sot-23 2N7002LT3 mst 702 sot-23 702 marking 702 sot-23 Sot-23 MARKING 702

    Untitled

    Abstract: No abstract text available
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID


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    PDF 2N7002L OT-23 2N7002L

    2N7002LT1G

    Abstract: 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage RGS = 1.0 MW


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    PDF 2N7002L OT-23 2N7002L/D 2N7002LT1G 2N7002L 2N7002LT1 2N7002LT3 2N7002LT3G

    702 TRANSISTOR sot-23

    Abstract: fet af sot-23 2N7002LT1 2N7002LT1 Motorola
    Text: MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc


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    PDF 2N7002LT1/D 2N7002LT1 236AB) 702 TRANSISTOR sot-23 fet af sot-23 2N7002LT1 2N7002LT1 Motorola

    2N7002L

    Abstract: QW-R502-284
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA, N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF 2N7002LL 115mA, 2N7002LL OT-23 2N7002LLK 2N7002LLG 2N7002LL-AE3-R 2N7002LLK-AE3-R QW-R502-284 2N7002L

    2N7002L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002L Preliminary Power MOSFET 60V, 115mA, N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC 2N7002L uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF 2N7002L 115mA, 2N7002L OT-23-3 O-236) 2N7002LG-AE2-R QW-R502-284

    marking 702

    Abstract: 2N7002LT ON
    Text: WILLAS FM120-M+ THRU 2N7002LT1 FM1200-M+ Small Signal MOSFET 115 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


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    PDF OD-123+ FM120-M+ 2N7002LT FM1200-M+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH marking 702 2N7002LT ON

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2N7002L Preliminary Power MOSFET 6 0 V , 1 1 5 m A, N -CH AN N EL M OSFET ̈ DESCRI PT I ON 3 The UTC 2N7002L uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF 2N7002L 2N7002L OT-23-3 O-236) 2N7002LG-AE2-R QW-R502-284

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET „ DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF 2N7002LL 115mA 2N7002LL OT-23-3 O-236) 2N7002LLK-AE2-R 2N7002LLG-AE2-R OT-23-3 QW-R502-284

    Untitled

    Abstract: No abstract text available
    Text: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF 2N7002L, 2V7002L 2N7002L/D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET  DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


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    PDF 2N7002LL 115mA 2N7002LL OT-23-3 O-236) 115mA 2N7002LLG-AE2-R QW-R502-284

    2N7002LT1

    Abstract: 2N7002LT3G 2N7002L 2N7002LT1G 2N7002LT3
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR 60 Vdc ID ID


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    PDF 2N7002L OT-23 2N7002L/D 2N7002LT1 2N7002LT3G 2N7002L 2N7002LT1G 2N7002LT3

    2N7002LT1G ON Semiconductor

    Abstract: No abstract text available
    Text: 2N7002L, 2V7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • 2V Prefix for Automotive and Other Applications Requiring Site and • • • Change Controls AEC Qualified − 2V7002L PPAP Capable − 2V7002L These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF 2N7002L, 2V7002L OT-23 2N7002L/D 2N7002LT1G ON Semiconductor

    RC0402JR-070RL

    Abstract: RC0402FR-07100KL SM0402 MFR Yageo GRM21BR60J106ME19L C4170 GRM32ER61C226KE20 SSQ-105-02-T-D-RA RC0402FR AN10
    Text: Description Features The ZL2105 is an innovative mixed-signal power management and conversion IC that combines an integrated step-down DC-DC converter with key power and thermal management functions in a single package. The ZL2105EV2 platform allows evaluation of the


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    PDF ZL2105 ZL2105EV2 ZL2105EV2DSR1 RC0402JR-070RL RC0402FR-07100KL SM0402 MFR Yageo GRM21BR60J106ME19L C4170 GRM32ER61C226KE20 SSQ-105-02-T-D-RA RC0402FR AN10

    Untitled

    Abstract: No abstract text available
    Text: M A X I M U M R A T IN G S Rating D rain-S ource Voltage Drain-G ate V o ltage R q S " M il * Drain C urrent — C o ntinuous TC = 25°C(1) TC = 100°C(1) - Pulsed (2) Tç Tc Value VDSS 60 Vdc vdgr 60 Vdc 'd Id ±115 ±75 mA 'd m ±aoo 2N7002LT1* CASE 318-07 STYLE 21


    OCR Scan
    PDF 2N7002LT1* OT-23 O-236AB)

    2N7002LT1

    Abstract: No abstract text available
    Text: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m


    OCR Scan
    PDF 2N7002LT1/D 7002LT1 O-236AB) 2N7002LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel Enhancement 2N7002LT1 3drain Motorola Preferred Device m 2 SOURCE M AXIM U M RATINGS 2 Rating Symbol Value D rain-Source Voltage VDSS 60 Vdc Drain-G ate Voltage Rq s = 1 -0 MS} VDGR 60 Vdc


    OCR Scan
    PDF 2N7002LT1