2N7334 JANTX Search Results

2N7334

Abstract: 2N7334 JANTX
Contextual Info: 2N7334 Qualified Levels: JAN, JANTX, and JANTXV QUAD N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/597 DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage

2N7334

Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

Contextual Info: Data Sheet No. PD-9.396E I“R INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETb [REF: M IL -S -19500/597] 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Vblt, 0.70 Ohm Product Summary <D The HEXFET technology is the key to International

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: 2N7334 MO-036AB
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 November 2010. MIL-PRF-19500/597E 18 August 2010 SUPERSEDING MIL-PRF-19500/597D 8 September 2003 * PERFORMANCE SPECIFICATION SHEET

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security