2N918 TRANSISTOR Search Results

2N918 JAN

Abstract: 2N918 2N918 JANTXV 2n918 transistor
Contextual Info: Data Sheet No. 2N918 Generic Part Number: 2N918 Type 2N918 Geometry 0013 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/301 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-72 case. • Also available in chip form using

2n918

Abstract: 2n918 transistor 2N918/2N918
Contextual Info: 2N918 Hfe Min 20 Ft Typ 600 MHz Transistor Polarity NPN Current Ic Continuous Max. Page 1 of 1 Enter Your Part # Home Part Number: 2N918 Online Store 2N918 Diodes Hfe Min 20 Ft Typ 600 MHz Transistor Polarity NPN Transistors Integrated Circuits Current Ic Continuous Max 0.05 A Voltage Vcbo 30 V

Contextual Info: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. Data Sheet No. 2N918 ><>niftBHhr m1 1 I cI ^88888 o % f# 1 l $ id L SEMICONDUCTORS Type 2N918 Generic Part Number: 2N918 G eom etry 0 0 1 3 Polarity NPN Qual Level: JAN - JA NTXV REF: MIL-PRF-19500/301

2n918

Abstract: 2n918 transistor
Contextual Info: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC 50 mA VCE 15 V O 300 mW @ TC = 25 C PDISS O 200 mW @ TC = 25 C O O O O

2N918

Abstract: 2n918 transistor transistor TO-72 MARKING CODE N for RF transistor
Contextual Info: 2N918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.

Contextual Info: 2N918 asi NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS lc 50 mA V ce 15 V P diss 300 mW @ Tc = 25 °C P diss 200 mW @ TA = 25 °C Tj -65 °C to +200 °C

Contextual Info: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS 5O mA Ie o m < 15 V p d is s 3OO mW @ Te & 25 0C p d is s 2OO mW @ Ta & 25 0C

2N918

Abstract: 2N918 thermal resistance 2N918 oscillator
Contextual Info: 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.

2n918 transistor

Abstract: 2N918 2N918A IEC134
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • ^53=131 □□lflESl S ■ 2N918 Jl T " 3 1- I S' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in TO-72 metal envelope with insulated electrodes and a shield lead connected to the case. The 2N918 is primarily intended for low power amplifiers and oscillators in the v.h.f. and u.h.f.

PN918

Abstract: 2n918 transistor SOT23 2N918 2n918 transistor PN918 transistor 2N918 National
Contextual Info: 2N918/PN918/MMBT918 National ISemiconductor PN918 2N918 MMBT918 7KXA hhJJ m /M U Cg TO-7 2 T0 72 TO “236 TO-9 2 SOT-23 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 2 T L /G /1 0 1 0 0 -1 NPN RF Transistor Electrical Characteristics t a = 25°c unless otherwise noted

2N918 JAN

Abstract: 2n918 die
Contextual Info: 2N918 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N918J • JANTX level (2N918JX)

NPN 200 VOLTS POWER TRANSISTOR

Abstract: 2N918 2N918 JANTX 2n918 die SEMICOA SEMICONDUCTORS npn transistor data
Contextual Info: 2N918 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918J • JANTX level (2N918JX)

2n2484 complementary

Abstract: Metal 2n2222 2N2484 2N2222 DUAL TRANSISTORS IN TO77 PACKAGE 2N2222/2N2222 2N2222/2n2484 complementary
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUIV. PD (Total) ^FE V CEO SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484 45 2N2913

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

2N918JAN

Contextual Info: TE£CHnTcAL DATA ^ 2N918 NPN Silicon Small-Signal Transistor CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoms, N.Y. 11778 designed for ultra-high frequency amplifier applications M A X IM U M R A T IN G S Symbol Value Collector-Emitter Voltage Rating

2N918 motorola

Abstract: 2N918 MHQ918 MHQ918H MHQ918HX MHQ918HXV MIL-STD-750 2072 14NB
Contextual Info: I MHQ918 MHQ918H MHQ918HX MHQ918HXV I I I I QUAD DUAL NPN HERMETIC HIGH FREQUENCY designed for low-level, Low Noise Figure fT= 850 Transistors IC Automatic applications. Product — to 2N918 Package — Compact Insertion for Hi-Rel See Tables MAXIMUM amplifier

2n918 die

Abstract: 2N918JS Transistor D 798 2N918 2N918J 2N918JV 2N918JX NPN 200 VOLTS POWER TRANSISTOR 2N918 JANTX 2N918 chip
Contextual Info: 2N918 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918J

2N918

Abstract: 2N91 2n918 die
Contextual Info: • JAN level 2N918J • JANTX level (2N918JX) 2N918 • JANTXV level (2N918JV) Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E

UHF UHF Transistors

Abstract: 2N3839
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.

2N918 pin configuration

Abstract: Transistor 2N918 2N918 2n918 continental devices india limited 2N918 CONTINENTAL DEVICE INDIA LIMITED 48-DEG
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N918 JAN

Abstract: 2N918UB 10VDC 2N918 oscillator 60mhz
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/301 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

UHF UHF Transistors

Abstract: 2n3478 2n918 low noise transistors vhf PNP UHF transistor UHF pnp transistor 2N917 2N2857 2n918 data sheet 2N918 DATASHEET
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100

Contextual Info: 2N918+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)10m