2N95 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2K1420

Abstract: 2N1507 2n1420
Contextual Info: kmse. ?n637 m w '¿am. m i sua 2N956, 2K1420 2N1&0? 2l\h613. ¿«1711 N-P-N SILICON TRANSISTORS ty p e s B U L L E T IN NO . DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 19 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N1711

Abstract: 2N956 2N718A X10-4 2N1711N
Contextual Info: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C

Contextual Info: 2N956 General purpose transistor 8.00 Transistors Transistors Bipolar Si NPN Low-Pow. Page 1 of 1 Enter Your Part # Home Part Number: 2N956 Online Store 2N956 Diodes General purpose transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits

CQ417

Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
Contextual Info: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A

2N1420

Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
Contextual Info: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N956

Abstract: 2N718A 718a
Contextual Info: 2N718A 2N956 SILICON PLANAR NPN AM PLIFIER S AN D SWITCHES The 2N 718A and 2N 956 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case, intended fo r high-speed switching and am plifier applications. ABSOLUTE M A X IM U M RATINGS VcBO

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18

2n2345

Abstract: 2N2344 2N3555 2n6336 2N2346 2N3560 2N2009 2N2012 2N2325 2N2348
Contextual Info: A SILICON CONTROLLED RECTIFIERS U O' 180mA TO-18 ro I o a 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 500mA 350mA TO-18 TO-5 TO-18 2N948 30 2N2683 •2N2687 2N5719 2N4109 TO-5 2N2009 2N5720 2N949 2N950 2N5721 2N951 2N2684 2N2688

2N1711

Abstract: 2N1711 MOTOROLA 2N956 2N956 MOTOROLA 2N3019 2N718 2N718A
Contextual Info: 2N718A 2N956 M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N718A 2N956 2N1711 VCER 50 Vdc Collector-Base Voltage v CBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ Tc = Derate above 25°C

2N956

Abstract: 2N718A N718A
Contextual Info: 3QE D • 7^5 3 7 aoaioa? 5 ■ T~- 3 5 -ic] SGS-THOMSON 2 N 718A 2 N 956 iO L iO IT G M O O S S G S-THOMSON AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten­ ded for high-speed switching and amplifier applica­

2N2905 2N2219

Abstract: FT3904 2N1711A 2N295 2N33 2N2905 2N2222JAN 2N3135
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) h FE V CEO VcE(sat) <V C E R > VO LTS TYPE MIN 2N957 20 2N2959 hpE @ MIN - MAX 45 lc mA VOLTS @ lc

2M1711

Abstract: 2N915 2N1613 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N718A 2N720A
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptal mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 VCE(SAT) hFE0 c h (MHz) ts tOFF IC/IB MNMAX (•A) <V) MAX 50* 80 50 40 40/120 40/50/200 50/200 150 150 10 10

2N1711 MOTOROLA

Abstract: 2n1711 2N956 2N956 MOTOROLA 2n718a
Contextual Info: 2N718A 2N956 M A X IM U M R ATIN G S Rating Symbol 2N718A 2N956 2N1711 Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation a T ^ = 25°C Derate above 25°C PD Total Device Dissipation

2n1132

Contextual Info: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc

2n2510

Abstract: 2N2222 2N2847
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N957 DESCRIPTION NPN RF/IF OSC BVCBO BVCEO BVEBO ICBO «S VCBG (V) (V) (V) (tiA ) MIN MIN MIN MAX •ICES "IC E V 40 20 5.0 . @ 1C h FE (mA) (V) . MIN MAX 45 . 10 @ VCE V C E(Si kT)@ !C Cob (V)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

Contextual Info: 2N95K5, 2N95K5, 2N95K5, 2N95K5 N-channel 950 V, 4.2 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 3 VDS RDS on max ID PTOT 1 2N95K5

2SC640

Abstract: 3N27 BC130C
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1077

Abstract: A472 G 2N1076 CI2923 2N1074 CK420 2sc196 2sc191 2N1075 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV