Untitled
Abstract: No abstract text available
Text: 2PB1219R Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)300m
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2PB1219R
Freq120M
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2PB1219R
Abstract: 2PB1219S 2PB1219 2PB1219A 2PB1219Q 2PB1219AQ 2PB1219AR 2PB1219AS
Text: Philips Semiconductors Objective specification PNP general purpose transistors 2PB1219; 2PB1219A FEATURES • Large collector current • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general amplification. DESCRIPTION
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2PB1219;
2PB1219A
2PB1219Q
2PB1219R
2PB1219S
2PB1219AQ
2PB1219AR
2PB1219AS
2PB1219
2PB1219
2PB1219A
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Untitled
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors PNP general purpose transistors 2PB1219; 2PB1219A FEATURES • Large collector current • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general amplification. DESCRIPTION
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OCR Scan
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PDF
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2PB1219;
2PB1219A
2PB1219Q
2PB1219R
2PB1219S
2PB1219AQ
2PB1219AR
2PB1219AS
2PB1219
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