2PG351 Search Results

2PG351

Contextual Info: 2PG351 IGBTs 2PG351 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible 10.0 -0 +0.3 For camera flash-light 0.8±0.2

2PG351

Contextual Info: 2PG351 IGBTs 2PG351 Insulated Gate Bipolar Transistor Unit : mm • Features 3.5±0.2 7.0±0.3 ● High breakdown voltage : VCES= 400V ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible +0.3 For camera flash-light

Contextual Info: 2PG351 IGBTs 2PG351 Insulated Gate Bipolar Transistor Unit : mm • Features 3.5±0.2 7.0±0.3 ● High breakdown voltage : VCES= 400V ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible M Di ain sc te on na

MIP161

Abstract: MIP164 D82R MIP103 mip160
Contextual Info: FET, IGBT, IPD • IGBTs Application Type No. Absolute Maximum Ratings lc peak lc (A) (V) (A) VcES Electrical Characteristics td (on) td (off) (ns) (ns) lc (mA) V ce (sat) (V) Packge tf (ns) No. 2PG301 400 20 130 < 2 .2 5 20 25 250 2 N Type D43 2PG302 400

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030