2SA AMPLIFIER Search Results

2SC1213

Abstract: 2sc1213a
Contextual Info: 2SC1213,2SC1213A Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SA 673 and 2SA 673A Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 u 1 Í j 306 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD I ^2 3 1. Em itter 2. Collector 3. Base 2SA 743, 2SA 743A Absolute Maximum Ratings Ta = 25 °C

022sa

Abstract: 1733K A1733K 2SA1733
Contextual Info: 2SA1733K/2SA1808 h ~7> v 7, $ / T ransistors 2SA 1733K 2SA 1808 — PNP y lj 3 > t ' 7 > y Z $ Epitaxial Planar PNP Silicon Transistor Amplifier h 7 1 2S A 1733K 1.9+ 0.2 0.8±0. i o . 95 O .s s j • Features < )in > ÿ 2S A 1808 2.9±0.2 2) I 1 ) Emitter

2SA495

Abstract: sk a 3050 c 2SC373 2SA495-Y 2SA495Y 2SC372 transistor 2sc373 transistor 2SC372 2sa495 toshiba 2SA495G
Contextual Info: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA PROCESS , ii ° High Frequency Amplifier ° High Speed Switching Applications 2SC372 2SC373 @ t ^ > T- ') * 's * a : fT = : VcE(sat) A -f y *S- -S Complementary INDUSTRIAL APPLICATIONS Applications = 200Wiz -0.2V (Typ.)

Contextual Info: H ITACH I 2SC5225-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA 1960. Features

2SA amplifier

Abstract: 2SA673
Contextual Info: HITACHI 2SA673, 2SA673A SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SC1213 and 2SC1213A ] ao :rr:r:zr|.:T a 1. Emitter • »! 2. Orvitecior 5. Base {Dimensions in mm) JEDEC TO-92) I ABSOLUTE MAXIMUM RATINGS <T*=25°C> item 2SA 673

2S0187

Abstract: transistor 2SC460 2SB637 ok01 2Sd763 2SC1472 transistor 2sc454 transistor 2sb1028 2SA1666
Contextual Info: SMALL SIGNAL TRANSISTOR •General amplifier Package Type No. code UPAK 2SB1000 2SB1000A 2SB1001 2SB1002 2 S fitlS 5 2SB1026 2SB1027 2SB1028 2SB1518 2SB1519 2SB1520 2SC3380 ■General switching Package Typo No. coda TO -92 2SA673A 2SA 778® 2SA778A® 2SA781 ®

2-7D101A

Abstract: 2SA1426 2SC3666
Contextual Info: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL

Contextual Info: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SA594

Abstract: FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178
Contextual Info: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA 594 PROCESSJj ii ft X * ffl INDUSTRIAL APPLICATIONS o o High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications Unit in mm : 3 u- ?»S ft i >1 %W 5 94 ¿3X7"! fT = 2,00MHz ( T y p .)

transistor 2SA

Contextual Info: TO SH IB A 2SC4689 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC4689 I 15.8 + 0.5 i • C om plem entary to 2SA 1804 • Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. MAXIMUM RATINGS Ta = 25°C

2SC1775

Abstract: 2SC1775A 2sa 872
Contextual Info: 2SC1775,2SC1775A Silicon NPN Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SA 872/A Outline TO-92 1 i fa ! I 3 350 I 2 1. Emitter 2. Collector 3. Base 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25°C)

2SA1804

Abstract: 2SC4689 y25I
Contextual Info: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.810.5 i 0 3.6 ±0.2 Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 3.5 MAXIMUM RATINGS Tc = 25°C

Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington HITACHI Application • Low frequency power amplifier • Complementary pair with 2SA 1193(K) Outline TO-92MOD 2 9 3 1. Emitter 2. Collector 3. Base o- Ô 904 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item

2SA1193

Abstract: circuit mri amplifier
Contextual Info: HITACHI 2SA1193 K SILICON PNP EPITAXIAL HIGH GAiN AMPLIFIER . E m ititr 1. Collrctor 3-. Bnie (Dimensions in mm) (JEDEC TO'92 MOD.) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS <Ta-25°C) 2SA 11 93 Unit VCBO -«0 V Collector to emitter voltage

Ge 2sa

Abstract: 2SA743A A743A 2SA743
Contextual Info: 2SA743, 2SA743A Silicon PNP Epitaxial HITACHI Apr. 13, 1998 Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline T O -1 2 6 M O D I 12 1. Emitter 2. Collector 3. Base 2SA 743, 2S A 743A Absolute Maximum Ratings Ta = 25 °C

2SA1804

Abstract: 2SC4689 111s1
Contextual Info: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.8±0.5 i Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 0 3 .6 Í0 .2 3.5 MAXIMUM RATINGS Ta = 25°C

2SC1226

Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Contextual Info: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A

Contextual Info: TOSHIBA 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in mm PO W ER AM PLIFIER APPLICATIONS I 15.8 + 0.5 i • C o m plem entary to 2SA 1803 • Recommend for 40W High Fidelity Audio Frequency Amplifier output Stage. M A XIM U M RATINGS Ta = 25°C

transistor 2SA

Abstract: 2SA940 AC550 2sa 940 2SC2073
Contextual Info: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073

Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions Units : mm • available in SM T3 (SMT, SC -59) and U M T3 (UNIT, SC -70) packages • package marking: 2SA 1036K and 2SA1577; (-!★, where ★ is hFE code • large collector current: ^C(max) = - 500 mA

2SA1264

Abstract: 2SA1264N 2SC3181N 8 open colector output
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1264N D E S C R IP TIO N • W ith TO -3P l package • Com plem ent to type 2S C 3181N • 2SA1264 with short pin A P P LIC A TIO N S • Pow er amplifier applications PINNING

TOSHIBA 2N3055

Abstract: Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor ST100Q22 HF VHF power amplifier module transistor bf422 fet
Contextual Info: 2.1 A Transistors C) EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2 SC 780 1st 2nd ST100Q22 3rd SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2.2 (Example) T ype 2SA PNP high-frequency use 2SB PNP low -frequency use

2SA992

Abstract: 2SC1845 PA33
Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA992 The 2SA 992 is best for use as the middle range am plifier in Hi-Fi stereo control amplifiers, power amplifiers, and etc. PACKAG E D IM E N S IO N S in millimeters inches FEATURES • High Voltage. V qeo