2SA105 Search Results

2SA1050

Contextual Info: Inchange Semiconductor Product Specification 2SA1050 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING see Fig.2

Contextual Info: 2SA1052 > v □ > p n p x \ ¿ $ > * • > 7 M í HITACHI MPAK 1. Emitter 2. Base 3. Collector Ta = 25°C im 2SA1052 3 1 / ^ ' ^ -X E ^C B O -30 V 3 1 / ^ í1 • i £ y ^ H E E VcEO -30 V x ia -5 V le -100 mA lE 100 mA Pe 150 mW Tj Tstg 150 °C —55~+150

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SA1051 Silicon PNP Power Transistor DESCRIPTION • High Current Capability • Collector-Emitter Breakdown Voltage- •"•N ', : V(BR)CEo=-150V(Min.)

Contextual Info: 2SA1057 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12è V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)

2SA1051

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1051 Silicon PNP Power Transistors DE S C R IPTIO N • W ith T O -3 package • High transition frequency • E xcellent safe operating area A P P LIC A T IO N S • For audio and general purpose pow er am plifier applications

2SA1050

Contextual Info: JMnic Product Specification 2SA1050 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High transition frequency ・Excellent safe operating area APPLICATIONS ・For audio and general purpose power amplifier applications PINNING see Fig.2 PIN

2SA1050

Contextual Info: SavantIC Semiconductor Product Specification 2SA1050 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING see Fig.2

2sc2460

Abstract: 2SA1050
Contextual Info: SavantIC Semiconductor Product Specification 2SC2460 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1050 ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING see Fig.2

Contextual Info: HITACHI 2 S A 1 0 5 2 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER iS ìM S jO L 55. ja 2 ¡S 'V , L. EmiiKT 2. Ba*c 3. Collector DinxrnioTA in mm (MPAK) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS (Ta=25“C) Item 2SA1052 ! Symbol Unit

2SA1050

Abstract: 2SC2460 amplifer
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1050 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min.) ·Complement to Type 2SC2460 APPLICATIONS ·Designed for power amplifer and general purpose

2SA1051

Contextual Info: SavantIC Semiconductor Product Specification 2SA1051 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING see Fig.2

2SA1052

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SA1051

Contextual Info: Inchange Semiconductor Product Specification 2SA1051 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING see Fig.2

Contextual Info: Product specification 2SA1052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Hitachi DSA0076

Abstract: 2SA1052
Contextual Info: 2SA1052 Silicon PNP Epitaxial ADE-208-1006A Z 2nd. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

2SA1031

Abstract: 2SA1052 Hitachi DSA00336
Contextual Info: 2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1052 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

Contextual Info: 2SA1052 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Hitachi DSA002754

Abstract: 2SA1052
Contextual Info: 2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline 2SA1052 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –30 V Emitter to base voltage VEBO –5

2sc2460

Abstract: 2SA1050
Contextual Info: Inchange Semiconductor Product Specification 2SC2460 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA1050 ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING see Fig.2

Contextual Info: 2SA1050A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)12 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA1031

Abstract: 2SA1052 250TU
Contextual Info: HITACHI 2SA1052 SILICON PNP EPITAXIAL •U.*+_00S LOW FREQUENCY AMPLIFIER 3U J nr f I . 0.16lo¿a « J i i0 .9 s ic . 9 s . r 1 1 5 2-e‘ s ; s o 1. I: miner 2. Bas< 3. Collector <Dimeiniom ifi mm d o t MPAK) MAXIMUM COLLECTOR DISSIPATION I ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SC2460

Contextual Info: <3smL-t.onau.ctot iJ-*i , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1050 DESCRIPTION • High Current Capability • Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min.)

2SA1052

Contextual Info: 2SA1052 Silicon PNP Epitaxial REJ03G0634-0300 Previous ADE-208-1006A Rev.3.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C)

2SA10

Abstract: 2SA1052
Contextual Info: 2SA1052 Silicon PNP Epitaxial HITACHI Application Low frequency amplifier Outline MPAK 123 2SA1052 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO -3 0 V Collector to emitter voltage VcEO -3 0 V Emitter to base voltage