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    2SA1107 Search Results

    2SA1107 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1107 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1107 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1107 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1107 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1107 Unknown Cross Reference Datasheet Scan PDF
    2SA1107A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1107A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1107A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1107A Unknown Cross Reference Datasheet Scan PDF

    2SA1107 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1107

    Abstract: 2sa110
    Text: Inchange Semiconductor Product Specification 2SA1107 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipations APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SA1107 MT-200 MT-200) -140V; 2SA1107 2sa110

    2SA1107

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SA1107 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipations APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SA1107 MT-200 MT-200) -140V; 2SA1107 HIGH VOLTAGE high current POWER PNP TRANSISTORS

    2SA1107

    Abstract: MT-200
    Text: JMnic Product Specification 2SA1107 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipations APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SA1107 MT-200 MT-200) -25mA -140V; 2SA1107

    2SA1107

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·For audio and general purpose applications


    Original     		PDF 2SA1107 -150V -150V; 2SA1107

    Untitled

    Abstract: No abstract text available
    Text: , One. J. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1107 DESCRIPTION PIN I. BASE • Collector-Emitter Breakdown Voltage- 2. COLLECTOR V(BR)CEo=-150V(Min)


    Original     		PDF 2SA1107 -150V MT-200 -25mA; -150V;

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SA1108A

    Abstract: 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 60W 2SA1102 -80 -6 -6A 150 80 -4 -2A 20* 150 (Tc=25ºC) 70W 2SA1103


    Original     		PDF 2SA1102 2SA1103 2SA1104 2SA1105 2SA1106 2SA1107 2SA1107A 2SA1108 2SA1108A 2SC2853 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    2SA1107

    Abstract: No abstract text available
    Text: AOK AOK Semiconductor Product Specification 2SA1107 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith M T-200 package • High power dissipations A PP LIC A TIO N S • A ud io and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base


    OCR Scan     		PDF 2SA1107 MT-200 -140V;

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711