2SA1162 PNP Search Results

2SA1162 PNP Result Highlights (5)

Part	Manufacturer	Description
2SA1162	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-0.15 A / hFE=70~400 / VCE(sat)=-0.3 V / AEC-Q101 / SOT-346
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini

2SA1162 PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1162 Abstract: 2SA1162G 2SA1162O Contextual Info: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.	Original	2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR OT-23 15Watts -100uAdc, -50Vdc 2SA1162G 2SA1162O	PDF
2SA1162Y Abstract: 2SA1162 Contextual Info: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.	Original	2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162Y 2SA1162	PDF
Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1162 2SC2712	PDF
Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1162 2SC2712	PDF
2SA1162 Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1162 2SC2712 2SA1162	PDF
Contextual Info: TOSHIBA 2SA1162 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. U nit in mm + 0.5 • High Voltage and High Current : V q e O “ —50V, IC ——150mA (Max.) 3.5-as •I 0.ÍÍ5	OCR Scan	2SA1162 --50V, ----150mA 2SC2712 961001EAA2'	PDF
2SA1162 Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR Contextual Info: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.	Original	2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR	PDF
Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: Unit: mm VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1162 2SC2712	PDF
2SA1162 Abstract: 2SC2712 Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1162 2SC2712 2SA1162 2SC2712	PDF
2SA1162GR Abstract: 2SA1162-G Contextual Info: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor	Original	2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 -100uAdc, 2SA1162GR 2SA1162-G	PDF
Contextual Info: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor	Original	2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23	PDF
Contextual Info: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.	Original	2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23	PDF
2SA1162 Abstract: 2SA1162 PNP 2SC2712 Contextual Info: 2SA1162 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1162 ○ 低周波増幅用 ○ 低周波低雑音増幅用単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) : VCEO = −50 V	Original	2SA1162 2SC2712 O-236MOD SC-59 2SA1162 2SA1162 PNP 2SC2712	PDF
MARKING SY SOT23 Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG	Original	OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO	PDF

Contextual Info: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package	Original	2SA1162 OT-23 2SC2712. -100mA, -10mA 22-Oct-2009	PDF
2SA1162 PNP Abstract: 2SA1162 2SC2712 M6 SOT23-3 Contextual Info: 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:V CE =-45 V 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS	Original	2SA1162 OT-23 2SC2712 -100mA -100mA, -10mA 300uS 2SA1162 2SA1162 PNP 2SC2712 M6 SOT23-3	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG	Original	OT-23 2SA1162 2SC2712. -100mA -10mA	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1162 TRANSISTOR PNP FEATURES z Low noise: NF=1dB(Typ.)10dB(Max.) z Complementary to 2SC2712 z Small package 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 2SA1162 2SC2712 -100mA -10mA 2SA1162	PDF
2SA1162 Abstract: 2SC2712 Contextual Info: 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:V CE =-45 V 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS	Original	2SA1162 OT-23 2SC2712 -100mA -100mA, -10mA 300uS 2SA1162 2SC2712	PDF
Contextual Info: TO SHIBA 2SA1162 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process + 0 .5 2.5-0.3 +0. 2 5 1.5-0.15 Audio Frequency General Purpose •o M - M Amplifier Applications Features • High Voltage and High Current. - VCE0 = -50V (Min.), Ic = -150mA (Max.)	OCR Scan	2SA1162 -150mA 2SC2712	PDF
marking SG transistors Abstract: A0 SOT 2SA1162 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150	Original	OT-23-3L OT-23-3L 2SA1162 -100mA, -10mA marking SG transistors A0 SOT 2SA1162	PDF
2SA1162 Abstract: 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23 Contextual Info: 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES   SOT-23 Low Noise: NF=1 dB Typ. , 10 dB(Max.) Complements of the 2SC2712 A L 3	Original	2SA1162 OT-23 2SC2712 OT-23, 2SA1162-O 2SA1162-Y 2SA1162-GR -100A, -100mA, -10mA 2SA1162 2SA1162Y 2SA1162GR 2sa116 2SA1162-Y 2SC2712 2SA1162-GR MARKING SY SOT23	PDF
2SA1162 Abstract: 2SC2712 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG	Original	OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712	PDF
SY SOT23 Abstract: SG SOT23 MARKING MARKING sg SOT23 Contextual Info: 2SA1162 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	2SA1162 OT-23 OT-23 2SC2712 -100A -100mA -10mA SY SOT23 SG SOT23 MARKING MARKING sg SOT23	PDF

2SA1162 PNP Search Results

2SA1162 PNP Result Highlights (5)

2SA1162 PNP Datasheets Context Search

2SA1162

2SA1162Y

2SA1162

2SA1162

2SA1162

2SA1162GR

2SA1162

MARKING SY SOT23

2SA1162 PNP

2SA1162

marking SG transistors

2SA1162

2SA1162

SY SOT23