2SA132 Search Results

2SA1012

Abstract: 2SA1293 2SC2562 2SC3258
Contextual Info: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6

2SA1327

Contextual Info: AOK AOK Semiconductor Product Spec ification 2SA1327 Silicon PNP P o w e r Transistors DESCRIPTION • W ith TO-22QFa package • L o w c o lle c to r s a tu r a tio n v o lta g e • H ig h c u rre n t c a p a c ity APPLICATIONS ¿ • S tro b e fla s h a p p lic a tio n s

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. 2SA1328 INDUSTRIAL APPLICATIONS U nit in mm • Low Collector Saturation Voltage : v CE(sat)= -0 .4 V (M a x .)a t I c = - 6 A • High Speed Switching Time : tgtg= 1.0/us (Typ.)

2SA1328

Abstract: 2SC3345
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 APPLICATIONS ·Designed for high current switching applications.

sb 320 toshiba audio power amplifier

Contextual Info: Sb TOSHIBA {D I SC RE TE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO 2SA1327 » F I S C H T E S D 0007314 0 5óC 07314' » T “"3 ^ - / 7 SILICO N PNP E P IT A X IA L TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 10L3M A X.

150-mF

Abstract: 2SA1323 2SC333
Contextual Info: - - « J* m ^ @ m • 2 SC3 3 1 3 t o : iw fö T a s it r a : AM/FM 7 ~s-%<D RF i ü , g£, Ä j S l^ Ä S o • 2 S C 3 3 I 4 T O fö T : ¡ * Ä if O T 2SA1323 ¿ 3 > 7 -,J > 4 $ Ä : AM/FM 7 § Vceo (V 20 Vebo (V) 5 M M H z) ! c (mA) 30 Cre(pF) hFE Pc(mW)

2SA1323

Contextual Info: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping

2SA1327A

Contextual Info: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr

A1320 TRANSISTOR

Abstract: A1320 2SA1320 2SC3333 nj TRANSISTOR
Contextual Info: 2SA1320 TOSHIBA 2 S A 1 320 T O SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SW ITCHING APPLICATIONS COLOR TV C H R O M A OUTPUT APPLICATIONS . 5.1 M AX. • • • High Voltage : VCEO= —250V Low Cre : 1.8pF(Max.)

2SA1020Y

Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH

Contextual Info: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm

2sa1320

Abstract: 2SC3333
Contextual Info: 2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications • High voltage: VCEO = −250 V · Low Cre: 1.8 pF (max) · Complementary to 2SC3333 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1321 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)50m Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA1320

Contextual Info: 2SA1320 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS .5.1 M AX. • • • High Voltage : V q e q ——250V Low Cre : i.SpF (Max.) Complementary to 2SC3333

A1327

Abstract: 2SA1327A
Contextual Info: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)

2sa1328

Abstract: 2SC3345
Contextual Info: JMnic Product Specification 2SA1328 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3345 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING

2SC3334

Abstract: C3334 2SA1321
Contextual Info: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SC3346

Contextual Info: 2SC3346 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : v C E sat = 0-4V (Max.) (at Ic = 6A) High Speed Sw itching Time : tstg = 1.0/iS (Typ.) Com plem entary to 2SA1329

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1327 U nit in mm STROBE FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. • • • • 1CL3MAX. MIN. hpE of 70 at —2V, —8A —10A Rated Collector Current MAX. V cE (sat)of -0.5V at -8 A Ic 20W at 25°C Case Temperature

2SA1327A

Contextual Info: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr

Contextual Info: JbE.rn.i~Condii.ctot L/^ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1327 DESCRIPTION • Low Collector Saturation Voltage: VcE<satr -0.5V(Max.)@lc= -8A

2SC3346

Abstract: 2SA1329
Contextual Info: SavantIC Semiconductor Product Specification 2SC3346 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1329 ·High speed switching time : tstg=1.0µs Typ. ·Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A

Contextual Info: TOSHIBA 2SC3333 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 5.1 M AX. • High Voltage : V ç e o = 250V : 1.8pF (Max.) Low Cre Complementary to 2SA1320