2SA138 Search Results

Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SA1385-Z

Contextual Info: Transistors SMD Type Silicon PNP Epitaxia 2SA1385-Z TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter

2SA1387

Contextual Info: JMnic Product Specification 2SA1387 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・High DC current gain APPLICATIONS ・High current switching applications PINNING

251C

Abstract: 25X2 2SA1388 2SC3540 Car r
Contextual Info: AOK AOK Semiconductor P roduct S pecification 2SA1388 S ilico n PNP Pow er T ransistors D ESC R IPTIO N • W ith TD -220F a package • L o w collector saturation voltage • H ig h speed sw itching time • C om plem enta ry to 2SC 3540 APP LIC A TIO N S

2SA1387

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1387 Silicon PNP P o w er Transistors DESCRIPTION • W ith TD-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIO NS • High current switching applications

2SA1387

Contextual Info: 2SA1387 SILICON PN P EPITAXIAL T Y P E PC T PR O C ESS INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : v CE(sat)= -0 .4 V (Max.) at (Ic =- 3 A) High Speed Switching Time : tgtg= l.O^s (Typ.)

2SA1387

Contextual Info: Inchange Semiconductor Product Specification 2SA1387 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·High DC current gain APPLICATIONS ·High current switching applications

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

2SA1386

Abstract: transistor 2sa1386 2SA1386A 2SC3519 2SC3519A transistor 2sc3519 power transistor audio amplifier 500 watts
Contextual Info: ÆàMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP 2SA1386 2SA1386A .designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 105W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SC3519 & 2SC3519A

2SA1388

Abstract: 2SC3540
Contextual Info: SavantIC Semiconductor Product Specification 2SA1388 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 · APPLICATIONS ·High current switching applications

2SC3540

Abstract: 2SA1388
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1388 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@ IC= -3A ·High Switching Speed ·Complement to Type 2SC3540 APPLICATIONS ·Designed for high current switching applications.

Contextual Info: TO SHIBA 2SA1382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 382 PO W ER AM PLIFIER APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX • High DC Current Gain : hyg = 150~400 1(3= —0.5A • Low Saturation Voltage : V cE(sat) = -0 .5 V (MAX.) (IC = - 1A)

2SC3519

Abstract: 2SC3519A transistor 2sc3519 2SA1386
Contextual Info: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A

Contextual Info: SANKEN ELECTRIC CO LTD SSE 2SC3519 2SC3519A /-r>i “ 25*C V Absolute M ax im u m Ratinas “ Symbol VCBO VcEO Vebo lc Ib Pc T) 2SC3519 160 160 2SC3519A 180 180 Unit — rVr — • 7^D 741 DGQCnsa 2flfl HSAKJ Silicon NPN Epitaxial Planar ☆APT ☆Complement to type 2SA1386 thru 2SA1386A

c3503 transistor

Abstract: C3503 2SA1381 2SC3503 K70 TRANSISTOR ic 7170
Contextual Info: O rdering num ber: EN1426B 2SA1381/2SC3503 PNP/NPN Epitaxial Planar Silicon Transistor S A IiY O i High-Definition CRT Display Video Output Applications Features . High breakdown voltage: W 3 OOV. . Small reverse transfer capacitance and excellent high frequency characteristic Cre=1.8pF NPN , 2.3PF(PNP) VCB=30V.

2SA1386

Abstract: 2SA1386A 1386A
Contextual Info: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A Application : Audio and General Purpose 2SA1386 2SA1386A Unit –100max –100max µA –160 –180 15.6±0.4 9.6 VCB= –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)

2SA1384

Abstract: 2SC3515
Contextual Info: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2SA1382

Abstract: A1382
Contextual Info: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

2SA1386

Abstract: 2SA1386A 1386A transistor 2sc3519 DSA0016503 transistor 2sa1386
Contextual Info: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A

2SC3519

Abstract: 2SC3519A SE140 2SA1386 c 3519a DSA0016507
Contextual Info: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=10V, f=1MHz 180 160 V 50min∗ IC=5A, IB=0.5A 2.0max V

KSA1381 spice model

Abstract: A1381E 2SA1381 pnp transistor crt high definition 2SC3503 2SA1381 transistor 2sa1381c 2SA1381CSTU 2SA1381 SPICE 2SA1381ESTU
Contextual Info: 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V

2SC3503

Abstract: 2SA1381 ITR03346 ITR03347
Contextual Info: 注文コード No.N 1 4 2 6 B 2SA1381/2SC3503 No. N1426B 81000 半導体ニューズ No.1426A とさしかえてください。 2SA1381 / 2SC3503 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイ , ビデオ出力用

2SA1384

Contextual Info: TOSHIBA 2SA1384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 13 8 4 HIGH VOLTAGE CONTROL APPLICATIONS U nit in mm PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS l.GMAX. 4.6MAX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7MAX.