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    Toshiba America Electronic Components 2SA1382,T6MIBF(J

    TRANS PNP 50V 2A TO92MOD
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    2SA1382 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1382 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SA1382 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1382 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1382 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1382 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1382 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1382 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1382 Unknown Cross Reference Datasheet Scan PDF
    2SA1382 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1382 Toshiba Silicon PNP transistor for power amplifier and high speed switching applications Scan PDF
    2SA1382 Toshiba TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Scan PDF
    2SA1382 Toshiba PNP Silicon Transistor Scan PDF
    2SA1382 Toshiba TO-92MOD Audio / TV Transistors Scan PDF
    2SA1382,T6MIBF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF

    2SA1382 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1382

    Abstract: A1382
    Text: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)


    Original     		PDF 2SA1382 2SA1382 A1382

    Untitled

    Abstract: No abstract text available
    Text: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)


    Original     		PDF 2SA1382 O-92MOD

    2SA1382

    Abstract: A1382
    Text: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)


    Original     		PDF 2SA1382 2SA1382 A1382

    Untitled

    Abstract: No abstract text available
    Text: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Industrial Applications Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)


    Original     		PDF 2SA1382

    2SA1382

    Abstract: A1382
    Text: 2SA1382 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1382 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1382 O-92MOD 2SA1382 A1382

    2SA1382

    Abstract: A1382
    Text: 2SA1382 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1382 Power Amplifier Applications High-Speed Switching Applications Unit: mm • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)


    Original     		PDF 2SA1382 2SA1382 A1382

    2SA1382

    Abstract: A1382
    Text: 2SA1382 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1382 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1382 O-92MOD 20070701-JA 2SA1382 A1382

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1382

    Abstract: A1382
    Text: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)


    OCR Scan     		PDF 2SA1382 75MAX 2SA1382 A1382

    2SA1382

    Abstract: A1382
    Text: TO SH IBA 2SA1382 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS . • • 5.1 MAX High DC Current Gain : hFE = 150-400 Ic = -0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)


    OCR Scan     		PDF 2SA1382 75MAX 2SA1382 A1382

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL PLANAR TYPE 2SA1382 U nit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS • • • High DC Current Gain : hpE = 150~400 d c = —0.5A Low Saturation Voltage : VCE sat)=-0.5V (MAX.) (IC= - 1 A ) High Speed Switching : tgtg = 1.0/us (TYP.)


    OCR Scan     		PDF 2SA1382 O-92MOD

    2SA1382

    Abstract: A1382
    Text: TO SH IBA 2SA1382 2 S A 1 382 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm 5.1 MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 150-400 Ic = -0.5A Low Saturation Voltage : V eE(sat)=-ü-5V (M A Ä .)U C = - l A )


    OCR Scan     		PDF 2SA1382 2SA1382 A1382

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 382 POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS U n it in mm 5.1 M AX H igh DC C u rre n t G ain : h FE = 150-400 IC = -0.5A • Low S a tu ra tio n V oltage


    OCR Scan     		PDF 2SA1382

    2Sj72

    Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
    Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *


    OCR Scan     		PDF 2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102