2SA153 Search Results

251C

Abstract: 2SA1535 2SA1535A
Contextual Info: AOK AOK Semiconductor P ro d u c t S p e c ific a tio n 2SA1535 2SA1535A S ilic o n PNP P ow er T ra n s is to rs DESCRIPTION • With T0220Fa package • Complement to type 2SC3944/3944A • Optimum for the driver-stage of a 60W to 100Woutput amplifier APPLICATIONS

n0243

Abstract: 2Sa 536 2SC39 2SC3951 SA153
Contextual Info: Ordering number: EN 2435A 2SA1536/2SC3951 N0.2435A PN P/N PN E pitaxial P lan ar Silicon Transistors SAHYO i High-Definition CRT Display Video O utput Applications Applications • High-definition CRT display video output, wide-band amp Features • H igh f'jp: fT = 600MHz

44max

Abstract: 2SA1535A 2SA1535 2SC3944 2SC3944A b13E
Contextual Info: Power Transistors 2SA1535, 2SA1535A 2SA1535, 2SA1535A Silicon P N P Epitaxial Planar Type Package Dimensions AF Drivers, High Powre Amplifiers Complementary Pair with 2SC 3944, 2SC 3944A Unit I mm 4.4max, 10.2max. • Features *-H 2.9m ax. • V ery good linearity of DC c u rre n t gain

Contextual Info: Product specification 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO

Contextual Info: Product specification 2SA1531A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55 V Collector-emitter voltage VCEO

2SC3944

Abstract: 2SC3944A 2SC394
Contextual Info: SavantIC Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1535/1535A ·High transition frequency APPLICATIONS ·For low-frequency driver and high power amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

Contextual Info: Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Symbol Collector to 2SA1534

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Features  Package  Low noise voltage NV  High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type (0.425) Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5

2SA1536

Abstract: 2SC3951 ITR03875 ITR03876
Contextual Info: Ordering number:ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High definition CRT display video output, wide-band amplifier. unit:mm 2042B [2SA1536/2SC3951]

2042A

Abstract: 2SA1537
Contextual Info: Ordering number:EN2436B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions • High-definition CRT display video output, wide-band amplifier. unit:mm 2042A [2SA1537/2SC3952]

2SA1531

Abstract: 2SC3929
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531 • Package  Low noise voltage NV  High forward current transfer ratio hFE

2SA1532

Abstract: 2SC3930
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

2SA1532G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

2SA1533

Abstract: 2SC3939
Contextual Info: Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2SA1533

Abstract: 2SC3939
Contextual Info: Transistors 2SA1533 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5 • Low collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2SC3929

Abstract: 2SA1531 2SA1531A 2SC3929A K8022
Contextual Info: Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type 0.425 Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ (0.65) (0.65) 2.0±0.2 Rating Unit VCBO 35 V 10˚ VCEO Emitter-base voltage (Collector open)

2SA1532

Abstract: 2SC3930
Contextual Info: Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm 0.425 For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm • Features Collector to 2SA1531 Ratings –35 VCBO –35 0.3–0 0.65 1.3±0.1 0.65 V –55 Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

2SA1532G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and