2SA158 Search Results

Contextual Info: 2SA1586 SILICON PN P EPITAXIAL T Y P E TRANSISTO R Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : Vc e o = —50V, IC = —150mA Max. Excellent hpE Linearity : hjTE d c = —0.1mA)/hjrj; (Iq = —2mA) = 0.95 (Typ.)

2SA1580

Abstract: 2SC4104 ic 3172
Contextual Info: Ordering num ber:EN 3 1 7 2 SANYO i i 2SA1580/2SC4104 No.3172 PNP/NPN Epitaxial Planar Silicon Transistors High-Defínition CRT Display Applications Features • High fr • Small reverse transfer capacitance • Adoption of FBET process : 2SA1580 Absolute Maximum Ratings atTa = 25°C

2SA1588

Abstract: 2sc4118
Contextual Info: 2SA1588 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1588 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = −6 V, IC = −400 mA)

Contextual Info: TOSHIBA 2SA1586 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 586 AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • U nit in mm High Voltage and High current : V C E 0 = —50V, I C = - 1 5 0 m A (Max.) 2.1 ±0.1 1.2 5 ± 0.1

Contextual Info: SILICON NPN EPITAXIAL PCT PROCESS 2SC4118 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpE Linearity: h E E (2)=25(Min.) at V c e =6V, Ic=400mA • Complementary to 2SA1588.

2SA1586

Abstract: 2SA1586GR 2SA1586-Y 2SC4116 2SA1586O 2SA1586-GR
Contextual Info: 2SA1586 -0.15 A, -50 V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES     High DC Current Gain High Voltage and High Current Complementary to 2SC4116

Contextual Info: Transistors Low V c e s a t Transistor (-20V, -3A ) I 2SB1424 / 2SA1585S •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(aat). 2SB1424 VcE(sat) = -0 .2 V (Typ.) 2SA1585S (Ic/ I b = - 2 A / - 0 . 1 A ) 2) Excellent DC curre nt gain charac­

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 3. BASE 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)

A1587

Abstract: 2SA1587 MARKING J1A 2SC4117
Contextual Info: TO SH IBA 2SA1587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 587 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • Unit in mm 2.1 ± 0.1 High Voltage : V^ e q = —120V ±0.1 “•1.25 -H Excellent hjpg Linearity

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

2SA1588

Abstract: 2SC4118 A1588
Contextual Info: TOSHIBA 2SA1588 2 S A 1 588 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA

2SA1587

Abstract: 2SC4117
Contextual Info: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.) ·

TRANSISTOR BL 100

Abstract: transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4116W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1586. z Small package. Pb Lead-free APPLICATIONS z SOT-323 NPN Silicon Epitaxial Planar Transistor.

2SC4104

Abstract: 2SA1580
Contextual Info: 注文コード No. N 3 1 7 2 2SA1580/2SC4104 No. N 3 1 7 2 81000 2SA1580 / 2SC4104 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイ用 ・高 fT である。 ・帰還容量が小さい。

2SA1582

Abstract: sanyo 2033
Contextual Info: ; Ordering number: EN 2505 2SA1582/2SC4113 PN P/ NPN Epitaxial Planar Silicon Transistors SAiYOl Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri = 2.2kfl,R2= °°)

2SA1585S

Contextual Info: MCC TM Micro Commercial Components 2SA1585S 2SA1585S-Q 2SA1585S-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Plastic-Encapsulate Transistors Lead Free Finish/Rohs Compliant "P"Suffix designates

2SA1586

Abstract: 2SC4116
Contextual Info: 2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)

Contextual Info: 2SA1587 SILICON PNP EPITAXIAL TYPE U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : V q e o = —120V Excellent hjrg Linearity :hpE Ic = —0.1m A /hfE (Ic = —2mA) = 0.95 (Typ.) High hpE : hj'E = 200~700 Low Noise : NF = ldB (Typ.), 10dB(Max.)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SA1585S PNP Plastic-Encapsulate Transistors Power dissipation: PD = 0.4W Tamb=25℃

2SA1588

Abstract: 2SC4118
Contextual Info: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SC4112

Abstract: 2018a 2SA1581
Contextual Info: 2SC4112 N P N /W Epitaxial Plana» S ilico n Transistors jo’ ba S w itc h in g A pp lication s 2SA1581 w ith Bias Resistance lEiaa A pplications . Switching c i r c u i t , in v e rte r c i r c u i t , in te rfa c e c i r c u i t , d riv e r c ir c u it

2S897

Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Contextual Info: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3