2SA1811 Search Results

Contextual Info: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: TOSHIBA 2SA1811 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 811 Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. SW ITCHING APPLICATIONS. Excellent hEE Linearity : hFE 2 = 35 (M in.), (VCE= -2 V , IC = -300m A )

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SA1811

Abstract: 2SC4707 S-25
Contextual Info: 2SA1811 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 811 LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. Unit in mm 5.1 MAX • Excellent hEE Linearity : hpE 2 = 35 (Min.), (VCE= —2V, Iq= —300mA)

Contextual Info: 2SA1811 T O SH IB A 2 S A 1 811 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpg Linearity : h p E 2 = 35(M in.), ( V q r = Complementary to 2SC4707

2SA1811

Abstract: 2SC4707 S-25
Contextual Info: 2SA1811 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 811 LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • Unit in mm 5.1 M AX Excellent hpE Linearity : hpE 2 = 35 (Min.), (VCE= —2V, Iq= —300mA)

Contextual Info: 2 S A 1811 SILICON PNP EPITAXIAL TYPE Unit in mm LO W FREQ U EN CY AM PLIFIER APPLICATIO N S. DRIVER STA G E A M PLIFIER A PPLICA TIO N S. 5.1 MAX SW ITCHING A PPLICA TIO N S. • • Excellent hpE Linearity : hFE 2 = 35 (M in.), (V c e =:-2 V , I c = —300mA)

2sc4707

Abstract: 2SA1811
Contextual Info: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity ; 11F E 2 - ° U uvun.;, • , ± (J — O U U I I 1 . Í V

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON IMPN EPITAXIAL TYPE mm • m m w LOW FREQUENCY AMPLIFIER APPLICATIONS. U nit in mm 5/1M A X DRIVER STAGE AMPLIFIER APPLICATIONS. • 8 .2 M A X . SWITCHING APPLICATIONS. Ex cellen t hjrg L in e a rity : hF E 2 = 35 (M in .), (V c

Contextual Info: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity . oer ; 11F E 2 — o u • /iv/r* UV11I1.;,

2SA1811

Abstract: 2SC4707
Contextual Info: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. SWITCHING APPLICATIONS. • • Excellent hjpg Linearity : hKE 2 -35 (Min.), (Vç;e = 2V, Iç;= 300mA)

Contextual Info: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. 5 .1 M A X . DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpE Linearity : hFE 2 = 35 (Min.), ( V C = 2V, IC = 300mA)