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Toshiba America Electronic Components 2SA1832FT-GR(LTO,F
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2SA1832F Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA1832F	Toshiba	General Purpose Transistors (Single); Surface Mount Type: Y; Package: ESM; XJE016 JEITA: SC-89; Number of Pins: 3; Comments: General-purpose; Part Number: 2SC4738F; DC Current Gain hFE, min: (min 70) (max 400); DC Current Gain hFE, max: (max -0.3); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -50)	Original	PDF	132.38KB	3
2SA1832F	Unknown	PNP transistor	Scan	PDF	176.04KB	3
2SA1832F	Toshiba	Silicon PNP epitaxial type transistor for audio frequency general purpose amplifier applications	Scan	PDF	147.07KB	2
2SA1832F	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF	135.31KB	2
2SA1832F-GR	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3
2SA1832FGR	Toshiba	Silicon PNP Transistor	Scan	PDF	176.03KB	3
2SA1832FT	Toshiba		Original	PDF	154.54KB	4
2SA1832FT	Toshiba	PNP transistor	Original	PDF	155.28KB	3
2SA1832FT-GR	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3
2SA1832FTGR	Toshiba	Silicon PNP Epitaxial Type (PCT process) Transistor	Original	PDF	127.94KB	3
2SA1832FTY	Toshiba	Silicon PNP Epitaxial Type (PCT process) Transistor	Original	PDF	127.94KB	3
2SA1832FT-Y	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3
2SA1832FV	Toshiba	Transistor Silicon PNP Epitaxial	Original	PDF	144.53KB	4
2SA1832FV	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3

2SA1832FV-GR	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3
2SA1832FV-Y	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3
2SA1832F-Y	Toshiba	2SA1832 - TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	202.26KB	3
2SA1832FY	Toshiba	Silicon PNP Transistor	Scan	PDF	176.03KB	3

2SA1832F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1832F Abstract: 2SC4738F Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1832F 2SC4738F 2SA1832F 2SC4738F	PDF
2SA1832FT Abstract: 2SC4738FT Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。	Original	2SA1832FT 2SC4738FT 2SA1832FT 2SC4738FT	PDF
2SA1832F Abstract: 2SC4738F Contextual Info: 2SA1832F シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1832F ○ 低周波増幅用 • 単位: mm : VCEO = −50 V 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。	Original	2SA1832F 2SC4738F 2SA1832F 2SC4738F	PDF
2SA1832FT Abstract: 2SC4738F Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity	Original	2SA1832FT 2SC4738F 2SA1832FT 2SC4738F	PDF
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1832F 2SC4738F	PDF
2SA1832FT Abstract: 2SC4738F Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity	Original	2SA1832FT 2SC4738F 2SA1832FT 2SC4738F	PDF
Contextual Info: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS • • • High Voltage and High Current : VCE0 = - 50V, I C = - 150mA(Max.) Excellent hpE Linearity : hpE Oc ~ - 0.1mA) I hFE d c = -2m A) = 0.95 (Typ.)	OCR Scan	2SA1832F 150mA 2SC4738F T-100mA, --10mA --10V,	PDF
2SA1832F Abstract: 2SC4738F Contextual Info: TO SH IBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : V c e O = -5 0 V, Iq = -1 5 0 mA (max.)	OCR Scan	2SA1832F 2SC4738F 2SA1832F 2SC4738F	PDF
marking IAY Abstract: 2SA1832F 2SC4738F Contextual Info: TOSHIBA 2SA1832F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.) Excellent hFE Linearity	OCR Scan	2SA1832F 150mA 2SC4738F marking IAY 2SA1832F 2SC4738F	PDF
2SC4738TT Abstract: 2SA1832F Contextual Info: 2SC4738TT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738TT Audio Frequency General Purpose Amplifier Applications 0.22 ± 0.05 Complementary to 2SA1832F • Small package 1 0.45 • 1 0.45 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)	Original	2SC4738TT 2SA1832F 2SC4738TT 2SA1832F	PDF
Contextual Info: TOSHIBA 2SA1832F TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS • • • • • 1.6 ± 0.1 High Voltage and High Current ; V q e O = “ 50V, Ic = —150mA (Max.)	OCR Scan	2SA1832F 150mA 2SC4738F	PDF
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1832F 2SC4738F	PDF
2SC4738FV Abstract: MARKING LY toshiba 2SA1832FV Contextual Info: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV	Original	2SC4738FV 2SA1832FV 2SC4738FV MARKING LY toshiba 2SA1832FV	PDF
2SA1832FT Abstract: 2SC4738F Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/	Original	2SA1832FT 2SC4738F 2SA1832FT 2SC4738F	PDF

Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications • High voltage: VCEO = −50 V • High current: IC = −150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE linearity	Original	2SA1832FT 2SC4738F	PDF
2SA1832FV Abstract: 2SC4738FV Contextual Info: 2SA1832FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 to 400 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) 1 2 3 Maximum Ratings (Ta = 25°C)	Original	2SA1832FV 2SC4738FV 2SA1832FV 2SC4738FV	PDF
2SA1832FT Abstract: 2SC4738F Contextual Info: 2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = −50 V · High current: IC = −150 mA (max) · High hFE: hFE = 120 to 400 · Excellent hFE linearity	Original	2SA1832FT 2SC4738F 2SA1832FT 2SC4738F	PDF
2SA1832FT Abstract: 2SC4738FT Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。	Original	2SA1832FT 2SC4738FT 20070701-JA 2SA1832FT 2SC4738FT	PDF
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1832F 2SC4738F	PDF
marking IAY Abstract: 2SA1832F 2SC4738F Contextual Info: 2SA1832F TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1832F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm 1.6 ± 0.1 • 0.85 ± 0.1 High Voltage and High Current : V c e O = - 5 0 V, I q = - 1 5 0 mA (max.)	OCR Scan	2SA1832F 2SC4738F marking IAY 2SA1832F 2SC4738F	PDF
2SA1832F Abstract: 2SC4738F Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)	Original	2SA1832F 2SC4738F 2SA1832F 2SC4738F	PDF
2SA1832FT Abstract: 2SC4738FT Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • • • • • Unit: mm High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity	Original	2SC4738FT 2SA1832FT 2SA1832FT 2SC4738FT	PDF
2SA1832FT Abstract: 2SC4738FT Contextual Info: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity	Original	2SC4738FT 2SA1832FT 125transportation 2SA1832FT 2SC4738FT	PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF

2SA1832F Search Results

2SA1832F Price and Stock

Toshiba America Electronic Components 2SA1832FT-GR(LTO,F

2SA1832F Datasheets (18)

2SA1832F Datasheets Context Search

2SA1832F

2SA1832FT

2SA1832F

2SA1832FT

2SA1832FT

2SA1832F

marking IAY

2SC4738TT

2SC4738FV

2SA1832FT

2SA1832FV

2SA1832FT

2SA1832FT

marking IAY

2SA1832F

2SA1832FT

2SA1832FT

lm2804