2SA1942 Search Results

2SA1942 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA1942	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(L); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(80W); Part Number: 2SC5199	Original	PDF	133.46KB	5
2SA1942	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	40.62KB	1
2SA1942	Unknown	Silicon PNP Transistor	Scan	PDF	134.15KB	2
2SA1942	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.81KB	1
2SA1942	Toshiba	TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE	Scan	PDF	187.99KB	4
2SA1942	Toshiba	Silicon PNP transistor for power amplifier applications. Recommended for 80W high fidelity audio frequency amplifier output stage	Scan	PDF	170.96KB	3
2SA1942	Toshiba	PNP transistor	Scan	PDF	187.99KB	4
2SA1942-O	Toshiba	2SA1942 - TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power	Original	PDF	133.45KB	5
2SA1942O	Toshiba	Silicon PNP Triple Diffused Transistor	Scan	PDF	187.98KB	4
2SA1942-R	Toshiba	2SA1942 - TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power	Original	PDF	133.45KB	5
2SA1942R	Toshiba	Silicon PNP Triple Diffused Transistor	Scan	PDF	187.98KB	4

2SA1942 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SA1942-O(Q) Trans GP BJT PNP 160V 12A 120000mW 3-Pin(3+Tab) TO-3PL Tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SA1942-O(Q)		781		40	1 - 10 - 100 $1.78 1000 $1.68 10000 $1.68	Buy Now
Quest Components	2SA1942-O(Q)		624			1 $3.52 10 $3.52 100 $3.52 1000 $1.94 10000 $1.94	Buy Now
Toshiba America Electronic Components 2SA1942-R(Q) Trans GP BJT PNP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SA1942-R(Q)		89		61	1 - 10 - 100 $1.41 1000 $1.41 10000 $1.41	Buy Now
Quest Components	2SA1942-R(Q)		71			1 $3.27 10 $3.27 100 $1.80 1000 $1.80 10000 $1.80	Buy Now

2SA1942 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2-21F1A Abstract: 2SA1942 2SC5199 Contextual Info: 2SA1942 東芝トランジスタシリコンPNP三重拡散形 2SA1942 ○ 電力増幅用単位: mm • 高耐圧です。: VCEO = −160 V 最小 • 2SC5199 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。	Original	2SA1942 2SC5199 2-21F1A 20070701-JA 2-21F1A 2SA1942 2SC5199	PDF
2SC5199 Abstract: 2-21F1A 2SA1942 Contextual Info: TOSHIBA 2SC5199 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. “ of	OCR Scan	2SC5199 2SA1942 2-21F1A 2SC5199	PDF
Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1942 2SC5199	PDF
2-21F1A Abstract: 2SA1942 2SC5199 Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1942 2SC5199 2-21F1A 2SA1942 2SC5199	PDF
Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1942 2SC5199	PDF
Contextual Info: 2SC5199 TOSHIBA 2 S C 5 1 99 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • J Ì3 .3 + 0 .2 - Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.	OCR Scan	2SC5199 2SA1942	PDF
Contextual Info: 2SA1942 TOSHIBA 2 S A 1 942 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SA1942 2SC5199	PDF
2SA1942 Abstract: 2SC5199 Contextual Info: Inchange Semiconductor Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage	Original	2SA1942 2SC5199 2SA1942 2SC5199	PDF
2sa1942 Abstract: 2SC5199 Contextual Info: SavantIC Semiconductor Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage	Original	2SA1942 2SC5199 -160V; 2sa1942 2SC5199	PDF
toshiba marking code transistor Abstract: Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199 Contextual Info: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1942 2SC5199 toshiba marking code transistor Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199	PDF
New Jersey Semiconductor Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1942 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltagePIN LEASE :V(BR)CEo=-160V(Min) 2.COLLECTOR • Complement to Type 2SC5199	Original	2SA1942 -160V 2SC5199 -50mA; New Jersey Semiconductor	PDF
2SC5199 Abstract: 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199 Contextual Info: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C	OCR Scan	2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199	PDF
A1942 Abstract: 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 2SC5199 Contextual Info: 2SA1942 TO SHIBA 2 S A 1 942 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. E P “ o f	OCR Scan	2SA1942 2SC5199 A1942 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942	PDF
Contextual Info: TO SH IB A 2SC5199 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 POWER AMPLIFIER APPLICATIONS. U nit in mm .3 + 0.2 20.5MAX • Complementary to 2SA1942 • Recommend for 80W High Fidelity Audio Frequency Amplifier O utput Stage. MAXIMUM RATINGS Ta = 25°C	OCR Scan	2SC5199 2SA1942	PDF

Contextual Info: 2SC5199 SILICON NPN TRIPLE DIFFUSED TYPE POW ER AMPLIFIER APPLICATIONS. • • U n it in m m Complementary to 2SA1942 Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC5199 2SA1942	PDF
2SC5199 Abstract: 2SA1942 Contextual Info: Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage	Original	2SC5199 2SA1942 2SC5199 2SA1942	PDF
A1942 Abstract: 2-21F1A 2SA1942 2SC5199 Contextual Info: 2SA1942 TO SH IBA 2 S A 1 942 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - MAXIMUM RATINGS Tc = 25°C	OCR Scan	2SA1942 2SC5199 A1942 2-21F1A 2SA1942	PDF
2SC5199 Abstract: 2-21F1A 2SA1942 Contextual Info: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.	Original	2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942	PDF
2SA1942 Abstract: 2SC5199 Contextual Info: JMnic Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage PINNING	Original	2SA1942 2SC5199 -160V; 2SA1942 2SC5199	PDF
1AM Y Abstract: 2SA1942 2SC5199 Contextual Info: AOK Product Specification AOK Semiconductor 2SA1942 S ilicon PNP Power Transistors D ES C R IP TIO N • W ith T O -3P L package • C om plem ent to type 2SC 5199 A P P LIC A T IO N S • Power am plifie r applications • R ecom m ended fo r 80W high fidelity audio	OCR Scan	2SA1942 2SC5199 1AM Y	PDF
A1942 Abstract: 2-21F1A 2SA1942 2SC5199 Contextual Info: 2SA1942 TOSHIBA 2 S A 1 942 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - M A X IM U M RATINGS Ta = 25°C	OCR Scan	2SA1942 2SC5199 000707EAA2' A1942 2-21F1A 2SA1942	PDF
Contextual Info: TO SHIBA 2SA1942 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 7 Ç A 1 QA? POWER AMPLIFIER APPLICATIONS. Unit in mm .3 + 0.2 20.5 MAX rifim nlprrnanfn-ru fn 9.HP.FÍ1QQ Recommend for 80W High Fidelity Audio Frequency Amplifier O n t n n t S fa c r p	OCR Scan	2SA1942 2-21F1A	PDF
2-21F1A Abstract: 2SA1942 2SC5199 Contextual Info: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C	OCR Scan	2SC5199 2SA1942 2-21F1A 2SA1942 2SC5199	PDF
2SC5199 Abstract: 2-21F1A 2SA1942 Contextual Info: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.	Original	2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942	PDF

2SA1942 Search Results

2SA1942 Datasheets (11)

2SA1942 Price and Stock

Toshiba America Electronic Components 2SA1942-O(Q)

Toshiba America Electronic Components 2SA1942-R(Q)

2SA1942 Datasheets Context Search

2-21F1A

2SC5199

2-21F1A

2SA1942

2sa1942

toshiba marking code transistor

New Jersey Semiconductor

2SC5199

A1942

2SC5199

A1942

2SC5199

2SA1942

1AM Y

A1942

2-21F1A

2SC5199