2SA198 Search Results

2SA1986

Abstract: 2SC5358
Contextual Info: JMnic Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

2SA1987 2SC5359

Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
Contextual Info: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage

MARKING SMD PNP TRANSISTOR

Abstract: SMD IC marking 2SA1981SF hFE-100
Contextual Info: Transistors IC SMD Type PNP Silicon Transistor 2SA1981SF SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Hfe:.hFE=100 to 320 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: Product specification 2SA1981SF SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Hfe:.hFE=100 to 320 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: SMD Type Product specification 2SA1980UF Features Low collector saturation voltage. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage

2sc5358

Abstract: 2SA1986
Contextual Info: SavantIC Semiconductor Product Specification 2SC5358 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

2SA1987 2SC5359

Abstract: 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
Contextual Info: SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

A007

Abstract: cob ic marking a007 2SA1980 2SC5343 SUT464M TRANSISTOR marking code X4 MARKING X4
Contextual Info: SUT464M Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Descriptions • General purpose transistor Features • Both 2SA1980 chip and 2SC5343 chip in SOT-25 package Ordering Information Type NO. SUT464M Marking X4 Package Code SOT-25 Outline Dimensions

2sa1987 transistor equivalent

Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS

2SA1987

Abstract: transistor 2SC5359 2-21F1A 2SC5359
Contextual Info: TO SHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO——230V (Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier

2SA1986

Abstract: 2SC5358
Contextual Info: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3

Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

2SA1980G

Abstract: 2SA1980Y a1980
Contextual Info: MCC TM Micro Commercial Components 2SA1980-O 2SA1980-Y 2SA1980-G 2SA1980-L
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x x x • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC5343

Abstract: Transistor TRANSISTOR C5343 c5343 transistor 2sc5343 2SC5343 equivalent 2SA1980 DSA00347436 C5343 Y C5343 transistor
Contextual Info: 2SC5343 7 Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980 Ordering Information

2SA1980

Abstract: Transistor TRANSISTOR a1980 a1980 transistor 2sa1980 2SC5343
Contextual Info: 2SA1980 Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343 Ordering Information

2SA1980

Abstract: 2SC5343
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 2SA1980 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES z Low collector saturation voltage: VCE(sat) =-0.3V(Max.) z Low output capacitance : Cob =4pF (Typ.) z Complementary pair with 2SC5343

TRANSISTOR a1981

Abstract: a1981 TRANSISTOR 2sa1981 2sa1981 2sc5344 9003
Contextual Info: 2SA1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. 2SA1981 Marking Package Code A1981 TO-92 Outline Dimensions

Contextual Info: 2SC5359 東芝トランジスタ シリコンNPN三重拡散形 2SC5359 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 230 V • 2SA1987 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。

2SA1980M

Abstract: 2SC5343M
Contextual Info: 2SA1980M ? Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343M Ordering Information

a1980

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1980 Features • • • • Low Collector Saturation Voltage: VCE sat =0.3V(Max.) Low Output Capacitance: Cob=4.0pF(Typ.) Complementary Pair With 2SC5343

Contextual Info: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

Contextual Info: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

a1980

Abstract: 2SA1980Y
Contextual Info: MCC TM Micro Commercial Components 2SA1980-O 2SA1980-Y 2SA1980-G 2SA1980-L
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x x x x Lead Free Finish/Rohs Compliant "P"Suffix designates

100-W

Abstract: 2-21F1A 2SA1987 2SC5359
Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.