2SA950 PNP Search Results

2SA950 PNP Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8

2SA950 PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA952L Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E	Original	2N6009 BC328 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b	PDF
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2SA950 2SC2120 SC-43	PDF
2SA950 Abstract: 2SC2120 2SA950 Y Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2SA950 2SC2120 SC-43 2SA950 2SC2120 2SA950 Y	PDF
2SA950 Abstract: 2SC2120 Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA950 2SC2120 SC-43 2SA950 2SC2120	PDF
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA950 2SC2120 SC-43	PDF
2SC2120-0 Abstract: 2SA950 2SC2120 Contextual Info: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SA950 2SC2120 SC-43 2SC2120-0 2SA950 2SC2120	PDF
2SA950 Abstract: 2SA950 Y Contextual Info: 2SA950 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: 3. BASE 1 2 3	Original	2SA950 -100mA -700mA -500mA, -20mA -10mA, 2SA950 2SA950 Y	PDF
2SA950 Abstract: 2SC2120 Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SA950 2SC2120 SC-43 2SA950 2SC2120	PDF
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SA950 2SC2120 SC-43	PDF
Contextual Info: •€> P e FORWARD INTERNATIONAL ELECTRONICS LTD. 2SA950 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * Complement To2SC212Q * Collector Current Ic=-800mA ABSOLUTE MAXIMUM RATINGS at Tanfc=25°C Characteristic	OCR Scan	2SA950 To2SC212Q -800mA -100uA -100mA -500mA 500mA -20mA	PDF
2SA950 Contextual Info: DC COMPONENTS CO., LTD. 2SA950 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base	Original	2SA950 -500mA, -20mA -100mA, -10mA, 2SA950	PDF
2SA950 Abstract: 2SA950 PNP Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SA950 700mA 500mA, 2SA950 2SA950 PNP	PDF
2SC1815 NPN SOT-23 Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213	Original	2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol	Original	2SA950 2SC2120 -10mA -100mA -700mA -500mA, -20mA	PDF

2SA950 PNP Abstract: 2SA950 2SC2120 35VCEO Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	2SA950 2SC2120 -100mA -700mA -500mA, -20mA -10mA 2SA950 PNP 2SA950 2SC2120 35VCEO	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating	Original	2SA950-O 2SA950-Y 2SC2120	PDF
2SA950 Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SA950 700mA 500mA, 2SA950	PDF
2SA950 Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SA950 700mA 500mA, 2SA950	PDF
2SA950Y Abstract: 2SA950-Y 2SA950 Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating	Original	2SA950-O 2SA950-Y 2SC2120 2SA950Y 2SA950-Y 2SA950	PDF
2SA950 Abstract: 2SA950 PNP Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SA950 500mA, 2SA950 2SA950 PNP	PDF
transistors 2SA950 Abstract: 2SA950 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V	Original	2SA950 -100mA -700mA -500mA, -20mA -10mA, transistors 2SA950 2SA950	PDF
2SA950 Abstract: 2SC2120 Contextual Info: 2SA950 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage	Original	2SA950 2SC2120 -700mA -500mA, -20mA -10mA -10mA -100mA	PDF
2SA950 Abstract: 2SC2120 Contextual Info: 2SA950 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA950 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級プッシュプルで 1 W の出力が得られます。 • 2SC2120 とコンプリメンタリになります。	Original	2SA950 2SC2120 SC-43 2SA950 2SC2120	PDF
ta8529f Abstract: TA8528 toshiba mcp Contextual Info: TOSHIBA TA8529F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP PACKAGE TA8529F Stepping Motor Driver 1C TA8528 + 2SA950 X 4 MCP TA8529F is a stepping motor driver 1C which operates based on bipolar transistors. The device incorporates stepping motor driver 1C TA8528	OCR Scan	TA8529F TA8528 2SA950 TA8529F TA8528 100mA 400mA toshiba mcp	PDF

2SA950 PNP Search Results

2SA950 PNP Result Highlights (5)

2SA950 PNP Datasheets Context Search

2SA952L

2SA950

2SA950

2SC2120-0

2SA950

2SA950

2SA950

2SA950

2SC1815 NPN SOT-23

2SA950 PNP

2SA950

2SA950

2SA950Y

2SA950

transistors 2SA950

2SA950

2SA950

ta8529f