2SA966 Y Search Results

a966 transistor

Abstract: A966 transistor a966 a966 transistor datasheet a966, transistor 2SA966 a966 y 2SC2236
Contextual Info: 2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA966 Audio Power Amplifier Applications • Unit: mm Complementary to 2SC2236 and 3-W output applications. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA966

Abstract: 2SA966 Y 2SC2236
Contextual Info: TOSHIBA 2SA966 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M A X • Complementary to 2SC2236 and 3Watts Output Applications. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

A966 transistor

Abstract: A966 a966 y A966 PNP a966, transistor a966 transistor datasheet 2SA966 2SC2236 transistor a966
Contextual Info: 2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA966 Audio Power Amplifier Applications • Unit: mm Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

transistor 2SA966

Abstract: 2sa966
Contextual Info: TO SH IB A 2SA966 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M AX • Complementary to 2SC2236 and 3Watts Output Applications. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

2SA966

Abstract: transistor 2SA966
Contextual Info: 2SA966 2SA966 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W(Tamb=25℃) 3. BASE Collector current ICM : -1.5 A Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

a966, transistor

Abstract: a966 transistor A966 a966 transistor datasheet 2SA966 transistor 2SA966 2SC2236 transistor a966 A-966 A966 PNP
Contextual Info: 2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA966 Audio Power Amplifier Applications • Unit: mm Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

a966 transistor

Abstract: a966 y A966
Contextual Info: 2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA966 Audio Power Amplifier Applications • Unit: mm Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2sa966

Contextual Info: TOSHIBA 2SA966 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. 5.1 MAX • Complementary to 2SC2236 and 3Watts Output Applications. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SA966 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUD IO PO W ER A M PLIFIER APPLICATIONS 5.1 MAX. • Complementary to 2SC2236 and 3 W Output Applications. M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SA966 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. 5.1 MAX • Complementary to 2SC2236 and 3Watts Output Applications. M A XIM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2sa966

Abstract: transistor 2sC2236
Contextual Info: TOSHIBA 2SA966 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUD IO PO W ER A M PLIFIER APPLICATIONS 5.1 MAX. • Complementary to 2SC2236 and 3 W Output Applications. M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO

A966

Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236 2SA966 Y
Contextual Info: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

A966

Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236
Contextual Info: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2SC2236

Abstract: 2sc2236 transistor transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA966

Abstract: 2SC2236 TO-92MOD transistor 2sC2236
Contextual Info: TO SH IBA 2SC2236 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2236 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 15.1 MAX. • Complementary to 2SA966 and 3 Watts Output Applications. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC2236

Abstract: 2SA966 2sc2236 transistor transistor 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC2236

Abstract: transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2236 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor c2236 2sC2236 2sc2236 transistor C2236 Y transistor 2sC2236
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA966

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA966 Unit in mm A U D IO POW ER AMPLIFIER APPLICATIONS. • Complementary to 2SC2236 and 3Watts Output Applications. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

transistor 2sC2236

Abstract: 2sc2236 TO 92L NPN Transistor
Contextual Info: 2SC2236 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE 1 Features — 2 3 0.600 0.800 0.350 0.550 Complementary to 2SA966 and 3 Watts output Applications. 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA966

Abstract: 2SC2236 transistor 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SA966 TRANSISTOR PNP 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts output Applications. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

2SA966

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA966 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W(Tamb=25℃) 3. BASE Collector current A ICM : -1.5 Collector-base voltage