2SB DARLINGTON Search Results

2SB1178

Abstract: 2SB1178A 2SD1748 2SD1748A
Contextual Info: Power Transistors 2SB 1178, 2SB 1178A 2SB1178, 2SB1178A P ackage Dim ensions U nit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7m ax. S 1 7 3max. ^ 1 3.2m ax. A F Power Am plifier ' C om plem entary Pair with 2 S D 1 7 4 8 , 2 S D 1 7 4 8 A 0.9 ± 0 .1

Contextual Info: m V J - v ~ - : v . ‘ : - . « w j : ^ ' : - : :*t o i i *-• - > - ^r: >: OWE RANSISTOR PNP DARLINGTON POWER TRANSISTORS Absolute M axim um Ratings Type No. Pc W Vcbo Vceo (V) (V) 2SB 1257 25 -60 -60 -6 2SB 1258 30 -100 -100 -6 V ebo (V) lc (A) Electrical Characteristics at TA = 25°C

Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.

2SB1254

Abstract: 2SD1894 high current Darlington pair IC Darlington pair IC
Contextual Info: Power Transistors 2SB 1254 Package Dimensions Unit : mm Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2S D 1894 1 5.5m ax. 5 2m ax. - s3 .2 • Features • Optimum for 60W hi-fi output • High DC current gain hpE

A-263A

Abstract: 2SB1194 2SD1633
Contextual Info: 2SB 1194 Power Transistors 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Power Switching Complementary Pair with 2SD 1633 Package Dimensions Unit • mm 4.4max. .lQ.Zmax., 5.7max. 2.9max • Features • • • • High speed switching Good linearity of DC current gain I i f e

2SB1253

Abstract: 2SD1893
Contextual Info: Power Transistors 2SB1253 2SB 1253 P ackage Dim ensions Silicon P N P Epitaxial Planar Darlington Type Pow er Amplifier C om plem entary Pair with 2 S D 1 8 9 3 Unit : mo 5 2max. "t-3.2 15.5 m ax. . 6 . 9 m in . • F eatures • Optimum for 40W hi-fi output

Contextual Info: V-’ y -i '2SB 1283 TP7J10 !iPS^§SfSBl PNP#*—U > h > h '7 > v X ^ / P N P Darlington Transistor fi-M \f> i 13 Out iine Dimensions 4.6±0-2 Equivalent Circuit 2.7 ±0-2 Q.7 ±0-2 U n it ! mm Case ! ÏTO -220 A bsolute Max. Ratings m & :• f f Conditions

transistors 2SA

Abstract: 1782K 2SA series 2SA1807 2SD1834
Contextual Info: Bipolar transistors-2SA series Bipolar transistors-2SA series The series name for RO H M ’s bipolar transistors is used to classify the products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series These transistors are available in the following packages:

2SB1568

Contextual Info: /'Transistors 2SB1568 2SB 1568 I fcf* * v I/ •- m PNP y U□ > h7 > y 7 * ? - H> h> £ ff Epitaxial Planar PNP Silicon Transistor (Darlington) 1 £ ) j£ fi2 ]iilP !ffl/Low Freq. Power Amp. • W fi^äsEÜl/Dim ensions (Unit : mm) • « ft 1) ? - ' ) >

2SB937

Abstract: 2SB937A 2SD12 2SD1260 2SD1260A SAL package panasonic 2SB
Contextual Info: Power Transistors 2 S D 1 2 6 0 , 2SD1260, 2SD12Ó0A 2 S D 1 2 6 0 A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max l.lmax. 8.7 max. 6.5max. I* »I Power A m plifier C om plem enta ry Pair with 2SB937, 2SB 937A _n

A327A

Abstract: 2SB1422
Contextual Info: Power T ransistors 2SB1422 2SB 1422 Silicon PNP Epitaxial Planar Darlington Type P ackage Dim ensions AF Amplifier • Features • High DC cu rre n t gain Ii f e • Built-in 60V Z ener diode b etw een C and B • D arlington configulation ■ Absolute M axim um Ratings ( T a = 25°C)

panasonic 2SB

Contextual Info: Power T ransistors 2SB 1179, 2S B 1179A 2SB1179, 2SB1179A Package Dim ensions U n it I mm Silicon PNP Epitaxial Planar Darlington Type 3.7m ax. 7.3max. Pow er Am plifier, Switching C o m plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A 0 .9 ± 0 .1 -

5 amp npn darlington power transistors

Contextual Info: h "7 > v 2SD1759 £ /T ransistors 2SD1759 Epitaxial Planar NPN Silicon Transistors Darlington féJ§}/£ll;fr*tIlllffl/L o w Freq. Power Amp. • fl-ffÎT jiiE il/D im ensio n s (Unit: mm) D ÿ - '; > i 2) BE[SH;ift4kQ(7)}iMjL$: (*)8c<. S S $ 3) 2SB 11 8 3 ¿ 3 > 7 ' J ? £ > £ ,

2sd 4515

Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
Contextual Info: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini

C 1008 y transistor

Abstract: 2sb1008
Contextual Info: 2SB1008 h ~7 > y 7 . $ /Transistors 2SB 1008 Epitaxial Planar PNP Silicon Transistor Darlington & JS '$S ^*tM iffl/Low Freq. Power Amp. • • 1) $ * } R - + ;£ l2 / D i m e n s i o n s ( U n i t : m m ) h > « « E T '* h F E ? * 5 o 7 .810.2 2 )B E (S llC |it)4kQ (73ffifiiirtlio S / f $

B1258

Abstract: B1259 B1625 2sb1620 2SD2490 2SC2495 2SD2401 2SD2489 2SB1622 2Sb1352
Contextual Info: • 2SB type Note: * Full-M old Absolute Maximum Ratings Ta=25 C Type No Pc W Vceo (V) 60 Ic (A) Vc e o ÍV ) L' J - Electrical Characteristics (Ta«25'C/ n. CO VCE ¿at; max (V) Package (M H z ) Thermal Resistance C/WJ fr — 4 150 2000 - 1 .5 150 5 .0 0

Contextual Info: 2SB 1282 TP4J10 I PNPff—U > K > h 7 > P N P Darlington Transistor .4.; I.-.- \f>£ISI O utline Dimensions 4.6±o.2 Equ ivalent C ircu it 2.7 ± 0.2 0.7 to.2 Unit ! mm Case 1 ITO-220 A b so lu te M ax. R atin g s m ie b I ; J u n c tio n T e m p e ra tu re

L2505

Contextual Info: h "7 > y7 > $ / T 2SB1344 ransistors 2SB 1344 PNP y <J □ > h 7 > y X 2 11?$* V Epitaxial Planar PNP Silicon Transistor Darlington 1£i§>Jfc£2j*Sli!ffl/L o w Freq. Power Amp. • 1) h -> fS < S c T 'h F E ? - ' ) > 2) • - 3) ' K - * • I 5 ¡4 0 /D im e n s io n s (U n it: mm)

UJ23

Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power T ransistors 2SB1179, 2SBÌ179V Package üvmensïons U n it ! m Silicon P N P Epitaxial P lan ar Darlington Type 7. 3 m a x . Power A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A , 3. 7m a x. 3.2max.

2SB1008

Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5

2SB852K

Abstract: T146 T147 a194
Contextual Info: h ~7 > 2SB852K /Transistors 2SB 852K x t r $ * '> 7 ^ y U “ t ! P N P y y 3 > K 7 > y X $ Epitaxial Planar PNP Silicon Transistor Darlington Gain Amp. * ^ M ^ S iH / 'D im e n s io n s (U nit: mm) 1) h > S « T S h Fe T * S o 2 ) B E r S K C t i 4 k Q 0 g % £ r t f t Q i& j£ $

2SB494

Abstract: LEI-4 2SB949 2SB949A 2SD1275 2SD1275A 2SB494A
Contextual Info: Power Transistors 2SB949, 2SB949A 2SB949, 2SB949A Package Dimensions Silicon NPN Epitaxial Planar Darlington Type Power Amplifier, Switching Complementary Pair with 2SD 1275, 2SD 1275A , • Features • High DC c u rre n t gain hFE • High sp eed switching

2SB938

Abstract: 2SB938A 2SD1261 2SD1261A
Contextual Info: Power Transistors 2SB938, 2SB938A 2SB938, 2SB938A P ackage Dim ensions U n it I mm Silicon PNP Epitaxial Planar Darlington Type 8.7 max. 6.5 max. Pow er A m plifier, Switching C om plem entary Pair with 2 S D 1 2 6 1 , 2 S D 1 2 6 1 A r— <6 i ▼ • Features