2SB0970 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)

2SB0970

Abstract: 2SB970
Contextual Info: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 Low collector to emitter saturation voltage VCE(sat).

Contextual Info: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 6 2 1 0.65±0.15 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • ARN-5 + 2SB0970 (2SB970)

2SB0970

Abstract: 2SB970
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) Emitter-base voltage (Collector open)

2SB0970

Abstract: 2SB970 2SD1328 XN04604 XN4604
Contextual Info: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD1328 + 2SB0970(2SB970) ■ Absolute Maximum Ratings

Transistor hFE CLASSIFICATION Marking CE

Abstract: hFE is transistor to-220 Vbe 8 V 2SB0970 2SB970
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Symbol Rating

2SB0970

Abstract: 2SB970
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05

2SB0970

Abstract: 2SB970 XN04404 XN4404
Contextual Info: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SB0970(2SB970) x 2 elements 0 to 0.1

2SB0970

Abstract: 2SB970
Contextual Info: Transistor 2SB0970 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95)

2SB0970

Abstract: 2SB970
Contextual Info: Transistors 2SB0970 2SB970 Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) 1.9±0.1 (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0970 (2SB970) Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

XN4608

Abstract: 2SB0970 2SB970 2SD0601A 2SD601A XN04608
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65)

xn07

Abstract: 2SB0970 2SB970 XN07651 XN7651
Contextual Info: Composite Transistors XN07651 XN7651 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d For motor drive 5 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05

2SB0970

Abstract: XN04404G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04404G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • Code Mini6-G3 • Pin Name

2SB0970

Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608 (XN4608) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification (Tr1) For amplification of low-frequency output (Tr2)

2SB0970

Abstract: 2SD1328 XN04604 XN04604G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04604G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification • Package  Code Mini6-G3  Pin Name

2SB0970

Abstract: 2SB970 XN04404 XN4404
Contextual Info: Composite Transistors XN04404 XN4404 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 6 3 2 1 0.65±0.15 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10

2SB0970

Abstract: XN04404G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04404G Silicon PNP epitaxial planar type For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)