2SB129 Search Results

2SD1832

Abstract: 2SB1292
Contextual Info: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

EN2516

Abstract: 2SB1935 2SB1295 2SB193
Contextual Info: Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2018A

2SB1296

Abstract: 2SB1936
Contextual Info: Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2033 [2SB1296/2SD1936] Features · Large current capacity.

2SB1293

Abstract: 2SD1896
Contextual Info: SavantIC Semiconductor Product Specification 2SB1293 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Complement to type 2SD1896 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier

2SB1292

Abstract: 2SD1832
Contextual Info: SavantIC Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1832 ·Excellent DC current gain characteristics ·Wide area of safe operation APPLICATIONS

2SD1832

Abstract: 2SB1292
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION •High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1832

2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

Contextual Info: Power T ransistors 2SB 1299 2SB1299 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier C o m plem entary Pair with 2 S D 1 2 7 3 Unit : m 4.4max. 10.2max. 5.7 max. • Features 2.9m«x. • High DC c u rre n t gain Iife • Good linearity of DC c u rre n t gain

Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.9±0.2 4.9±0.2 ● 0.7±0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in

2SB1290

Contextual Info: Transistors 2SB1290 2SD1833 96-630-B55 (96-741-D55) 285

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD1273

Abstract: 2SB1299
Contextual Info: Power Transistors 2SB1299 Silicon PNP epitaxial planar type Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one

2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 ● • Absolute Maximum Ratings 0.7±0.2 0.7±0.1 Ta=25˚C 13.5±0.5 ● Extremely satisfactory linearity of the forward current transfer

2sd1832

Contextual Info: 2SB1292 h "7 > '> 7 , $ / T r a n s i s t o r s 2SB1292 i t t i - 7 i* - n & pnp v v =i > k =7> v 7, $ Epitaxial Planar PNP Silicon Transistor Freq. Power Amp. • • ^ Jfi^ tiü S/D im en sio n s Unit: mm) 1) VcE(sat) V cE (sat)= —'0.3V (Typ.) (Ic / I b = - 3 A / - 0 . 3 A )

2sb1292

Contextual Info: h ~7 > A V X $ Q n 2SB1292 /Transistors j O Q O '> • ; = ] > h 7 > V ^ ^ ‘ÎS ;iil}Æ ® ^ i|liffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor \t";£ III/D im e n s io n s Unit: mm 1 ) VcE(sat) A 'Æ ^ 'o V c E (s a t)= — 0 .3 V (T y p .) Ic / I b = _

D1897

Contextual Info: Is ~7 > y 7* $ / I ransistors 2SB1294 2SB1294 i tf 2 + y 7 ft 7° \y - 1 M PN P v 1J n > N 7 > v * $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • \li£0/D im e n sio n s Unit: mm 1) VcE(sat) * 'r'(ÉH'o < 0. J 0.1 V c E (s a t)= — 0 .3 V (T y p .) I c / I B = ~

EN2516

Abstract: 2SB125 2SB1295 3004J 2SB12 2SD1935 D1935 N0251
Contextual Info: O rd e rin g n u m b e r: EN2516 2SB1295/2SD1935 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose _ Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features . Large current capacity

2SD1937

Abstract: 2SB1297 The 8002 Amplifier IC IC1001
Contextual Info: Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

2SB1295-5

Contextual Info: O rd e rin g n u m b e r :E N 2 5 1 6 2SB1295/2SD1935 No.2516 PNP/NPN Epitaxial Planar Silicon Transistors SA%'VO Low-Frequency General-Purpose _ Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features

Contextual Info: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)

Contextual Info: R OHM C O L T » 7 0 2 0 =1^ 40E » . ÜÜDSbOb 4 2SB1292 fs7 > ' / 7 Í¡ /Transistors 2331 iRHM X P N '> U -i> b P - r - 3 Z - i 9 ‘S iü l^ ^ ^ íe 'í'lffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ÿj-Jfi\t">ÉlU/’Dimensions Unit: mm

Contextual Info: ROHM CO L T D ll D E - TfiEfl'íTí » QGOSbCH S 7 > y ^ $ /Transistors T IRHM 2SB1293 T -3 Z -ñ x b ! $ * y 7 J l ' 7 l s - i - B P N P v ,J 3 > t ' 7 > y Z i t MffltäWJjiafäffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ífJ fí \t";£ 0 /D ¡m e n s io n s Unit: mm

Contextual Info: ROHM CO LTD HOE . /Transistors 12S0 TÛ SÔ W D DOQSbQQ 3 QRHÎ1 2SB1290 — - 7 = 3 3 -/9 X tr $ * y 7 I/ 7° U —t M PNP y U 3 > K ÿ > y 7. $ i&fël}j£WjjtmltlI ffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor •