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    2SB1317 Search Results

    2SB1317 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1317 Panasonic Silicon PNP triple diffusion planar type Original PDF
    2SB1317 Panasonic PNP Transistor Original PDF
    2SB1317 Panasonic Silicon PNP triple diffusion planar type Original PDF
    2SB1317 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1317 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1317 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1317 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1317 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1317P Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SB1317Q Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SB1317S Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF

    2SB1317 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180


    Original     		PDF 2SB1317 2SD1975

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm ● Parameter TC=25˚C Symbol Collector to 2SD1975 base voltage 2SD1975A Collector to 2SD1975 Ratings


    Original     		PDF 2SD1975, 2SD1975A 2SB1317 2SB1317A 2SD1975 2SD1975A

    2SD1975

    Abstract: 2SB1317A 2SB1317 2SD1975A
    Text: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● Parameter TC=25˚C Symbol Collector to


    Original     		PDF 2SD1975, 2SD1975A 2SB1317 2SB1317A 2SD1975 2SD1975 2SB1317A 2SD1975A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1975


    Original     		PDF 2SD1975, 2SD1975A 2SB1317 2SB1317A 2SD1975

    PT10V

    Abstract: 2SB1317 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SB1317 2SD1975 Hig100 PT10V 2SB1317 2SD1975

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB1317 2SD1975 2SB1317 2SD1975

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2SD1975 2SB1317 2SB1317 2SD1975

    2sb1317A

    Abstract: 2SD1975 2SB1317 2SD1975A
    Text: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1975


    Original     		PDF 2SD1975, 2SD1975A 2SB1317 2SB1317A 2SD1975 800mA 700mA 2sb1317A 2SD1975 2SD1975A

    2SB1317

    Abstract: 2SD1975
    Text: SavantIC Semiconductor Product Specification 2SB1317 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD1975 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier


    Original     		PDF 2SB1317 2SD1975 -20mA 2SB1317 2SD1975

    2SD1975

    Abstract: 2SD1975A
    Text: Inchange Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification


    Original     		PDF 2SD1975 2SD1975A 2SB1317/1317A 2SD1975 2SD1975180V; 2SD1975A

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1975 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO −180


    Original     		PDF 2SB1317 2SD1975 2SB1317 2SD1975

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −180 V Collector-emitter voltage (Base open) VCEO −180 V


    Original     		PDF 2SB1317 2SD1975

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE


    Original     		PDF 2SB1317 2SD1975 2SB1317 2SD1975

    2SB1317A

    Abstract: 2sd1975 2SB1317 2SD1975A
    Text: Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1975


    Original     		PDF 2SD1975, 2SD1975A 2SB1317 2SB1317A 2SD1975 2SB1317A 2sd1975 2SD1975A

    2SB1317

    Abstract: 2SD1975
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION •Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SD1975 APPLICATIONS ·High power amplification


    Original     		PDF 2SB1317 2SD1975 -180V -20mA 2SB1317 2SD1975

    2SB1317

    Abstract: 2SD1975
    Text: Inchange Semiconductor Product Specification 2SB1317 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD1975 ・Wide area of safe operation ・High transition frequency fT ・Optimum for the output stage of a Hi-Fi audio amplifier


    Original     		PDF 2SB1317 2SD1975 -20mA 2SB1317 2SD1975

    A1046

    Abstract: 2SD1975 2SB1317
    Text: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE


    Original     		PDF 2SD1975 2SB1317 A1046 2SD1975 2SB1317

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1975 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO −180


    Original     		PDF 2SB1317 2SD1975 2SB1317 2SD1975

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1975 2SD1975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1317 U n it I mm 5.3m ax. 20.5m ax. • Features 3 .0 - • V ery good linearity of DC c u rre n t gain Ii f e • Wide area of safety operation (ASO)


    OCR Scan     		PDF 2SD1975 2SB1317

    2SB 545

    Abstract: No abstract text available
    Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Amplifier Com plem entary Pair with 2SD1975 Package Dim ensions • Features ■ • Very good linearity of DC current gain • Wide area of safety operation ASO • High transition frequency (fT)


    OCR Scan     		PDF 2SB1317 2SD1975 20-5max. Q01b2t13 2SB 545

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)


    OCR Scan     		PDF 2SB1317 2SD1975 20-5max. 2SB1317 2SD1975

    transistors 1UW

    Abstract: 2SB1317 2SD1975
    Text: Power Transistors 2SD1975 2SD 1975 Silicon NPN Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SB1317 • Features • • • • Package Dimensions Unit I mm 5.3max. 20.5max. 3 .0 - Very good linearity of DC current gain Iife


    OCR Scan     		PDF 2SD1975 2SB1317 transistors 1UW 2SB1317 2SD1975

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A