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    2SB14 Search Results

    2SB14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1430-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SB1475-T2-A Renesas Electronics Corporation Small Signal Bipolar Transistors, SSP, / Visit Renesas Electronics Corporation
    2SB1431-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, / Visit Renesas Electronics Corporation
    2SB1432-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, / Visit Renesas Electronics Corporation
    2SB1475-T1-A Renesas Electronics Corporation Small Signal Bipolar Transistors, SSP, / Visit Renesas Electronics Corporation
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    2SB14 Price and Stock

    PanJit Group 2SB1429_R1_00001

    PNP LOW VCE(SAT) TRANSISTOR
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    DigiKey 2SB1429_R1_00001 Cut Tape 2,889 1
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    Ozdisan Elektronik 2SB1429_R1_00001
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    ROHM Semiconductor 2SB1412TLQ

    TRANS PNP 20V 5A SOT-428
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    Mouser Electronics 2SB1412TLQ 134
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    CoreStaff Co Ltd 2SB1412TLQ 2,040
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    PEI Genesis CA3106E20-22SB14

    CONN PLUG FMALE 6P SILVER CRIMP
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    DigiKey CA3106E20-22SB14 Bag 2,194 1
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    ROHM Semiconductor 2SB1412TLR

    TRANS PNP 20V 5A CPT3
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    DigiKey 2SB1412TLR Cut Tape 1,850 1
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    Verical 2SB1412TLR 5,460 126
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    Quest Components 2SB1412TLR 451
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    2SB1412TLR 172
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    PEI Genesis CA3100E14S-2SB14

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    DigiKey CA3100E14S-2SB14 Bag 769 1
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    2SB14 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB14 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB14 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB14 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB14 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB14 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB14 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB14 Unknown Cross Reference Datasheet Scan PDF
    2SB140 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB140 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB140 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB140 Unknown Vintage Transistor Datasheets Scan PDF
    2SB140 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB140 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB140 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB140 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB140 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB140 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB140 Unknown Transistor Replacements Scan PDF
    2SB140 Unknown Cross Reference Datasheet Scan PDF
    2SB1400 Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
    ...

    2SB14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1455

    Abstract: 2SD2203
    Text: Inchange Semiconductor Product Specification 2SB1455 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2203 ・Low collector saturation voltage: ・Large current capacity APPLICATIONS ・High current power switching applications


    Original     		PDF 2SB1455 O-220F 2SD2203 O-220F) 2SB1455 2SD2203

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed


    Original     		PDF 2SB1465 2SB1465

    2SB1407S

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial 2SB1407S TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low frequency power amplifier. Unit: mm +0.1 -0.1 0.127 max +0.25 2.65 -0.1


    Original     		PDF 2SB1407S O-252 2SB1407S

    2SB1429

    Abstract: 2SD2155
    Text: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB1429 2SD2155 2SB1429 2SD2155

    b1457

    Abstract: B1457 transistor 2SB1457
    Text: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)


    Original     		PDF 2SB1457 b1457 B1457 transistor 2SB1457

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 PNP silicon transistor.


    Original     		PDF 2SB1412 O-252 100MHz

    B1495

    Abstract: 2SB1495 2SD2257 100-C3000
    Text: 2SB1495 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1495 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 • 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −1.5 A)


    Original     		PDF 2SB1495 2SD2257 2-10R1A 20070701-JA B1495 2SB1495 2SD2257 100-C3000

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		PDF 2SD2257 2SB1495 D2257 2SB1495 2SD2257

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD2136 2SB1416 2SB1416 2SD2136

    2SB1463J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification


    Original     		PDF 2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89

    2SB1418

    Abstract: 2SB1418A 2SD2138 2SD2138A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 10.0±0.2 M Di ain sc te on na tin nc ue e/ d 1.0±0.2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SB1418, 2SB1418A 2SB1418 2SB1418 2SB1418A 2SD2138 2SD2138A

    EN3152

    Abstract: 3152 2069B 2SB1452
    Text: Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment.


    Original     		PDF EN3152 2SB1452/2SD2201 2SB1452/2SD2201-applied 2069B 2SB1452/2SD2201] 2SB1452 EN3152 3152 2069B 2SB1452

    EN3236

    Abstract: 2SB1405
    Text: Ordering number:EN3236 PNP Epitaxial Planar Silicon Transistor 2SB1405 General Driver Applications Features Package Dimensions • Darlington connection. · High DC current gain. · Large current capacity, wide ASO. unit:mm 2064 [2SB1405] E : Emitter C : Collector


    Original     		PDF EN3236 2SB1405 2SB1405] EN3236 2SB1405

    2069B

    Abstract: 2SB1449
    Text: Ordering number:EN3149 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1449/2SD2198 50V/5A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.


    Original     		PDF EN3149 2SB1449/2SD2198 2SB1449/2SD2198-applied 2069B 2SB1449/2SD2198] 2SB1449 2069B 2SB1449

    2SB1468

    Abstract: No abstract text available
    Text: Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, etc. unit:mm 2041A Features [2SB1468/2SD2219] · Micaless package facilitating mounting.


    Original     		PDF EN3364 2SB1468/2SD2219 2SB1468/2SD2219] O-220ML 2SB1468 2SB1468

    2SB1495

    Abstract: 2SD2257
    Text: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		PDF 2SB1495 O-220F 2SD2257 O-220F) -100V 2SB1495 2SD2257

    2SB1494

    Abstract: 2SD2256 DSA003644
    Text: 2SB1494 Silicon PNP Triple Diffused ADE-208-878 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SB1494 ADE-208-878 2SD2256 2SB1494 2SD2256 DSA003644

    2SB1409

    Abstract: 2SD2122 2SD2123 DSA003645
    Text: 2SD2122 L /(S), 2SD2123(L)/(S) Silicon NPN Epitaxial ADE-208-926 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector


    Original     		PDF 2SD2122 2SD2123 ADE-208-926 2SB1409 DSA003645

    100w audio amplifier

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)


    OCR Scan     		PDF 2SB1429 2SD2155 100w audio amplifier

    D2200

    Abstract: No abstract text available
    Text: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment


    OCR Scan     		PDF 2SB1451/2SD2200 2SB1451/2SD2200-applied 2SB1451 D2200 2SR1451

    ic est 7502

    Abstract: B1439 2SB1439 2SD2183
    Text: Power Transistors 2SB1439 2SB1439 Silicon PNP Epitaxial Planar Type • Package Dim ensions AF Output Am plifier C o m plem entary Pair with 2 S D 2 1 8 3 ■ Features • Low co llector-em itter saturation voltage VcE(sao • High co llector-em itter voltage


    OCR Scan     		PDF 2SB1439 2SD2183 132AS2 GGlb33S ic est 7502 B1439 2SB1439 2SD2183

    BJ 027

    Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
    Text: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA


    OCR Scan     		PDF 2SB1427 OT-89, SC-62) 2SB1427; -1A/-50 2SB1427 00m74i4 BJ 027 T100 transistor PNP marking BJ pnp SOT89

    2SB1418

    Abstract: 2SB1418A 2SD2138
    Text: Power T ransistors 2SB1-418, 2SB1418Ä 2SB1418, 2SB1418A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2SD 2138 • Features • H igh D C c u r re n t g ain I i f e • H igh s p e e d sw itc h in g


    OCR Scan     		PDF 2SB1418, 2SB1418Ã 2SB1418A 2SD2138 2SB1418 2SB1418A 2SD2138

    Untitled

    Abstract: No abstract text available
    Text: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SD2155 2SB1429 2-21F1A