2SB1424 Search Results

Contextual Info: Transistors Low V c e s a t Transistor (-20V, -3A ) I 2SB1424 / 2SA1585S •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(aat). 2SB1424 VcE(sat) = -0 .2 V (Typ.) 2SA1585S (Ic/ I b = - 2 A / - 0 . 1 A ) 2) Excellent DC curre nt gain charac­

transistor fn 155

Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

2SB1424

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO:

Contextual Info: 2SB1424 h -7 > v 7. $ / I ransistors 2 Q D 4 4 2 4 ie * * V 7 * 7 l/ - * P N P yÿ:]> h7> v;* ^ Epitaxial Planar PNP Silicon Transistor f é J IÎ& S ^ ii'Iïff l/ L o w Freq. Power Amp. • £I-Jfê v liiE l/D im e n s io n s Unit : mm 1 ) V c E(sat) A' ÎS t ' o

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB1424 LOW ̈ Preliminary V CE SAT PNP SILICON TRANSISTOR T RAN SI ST OR DESCRI PT I ON As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage

2SB1424

Abstract: Medium Power Transistor AER marking
Contextual Info: 2SB1424 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A   E E1  b1  1.BASE SOT-89  2.COLLECTOR  b L 3. EMITTER e1 FEATURES Dimensions In Millimeters Symbol Power dissipation

transistor QB

Abstract: PNP TRANSISTOR SOT89
Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; A E *, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = -2 A/-0.1 A

Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

sit transistor

Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

AER marking

Abstract: 2SB1424 PCM600
Contextual Info: 2SB1424 2SB1424 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: -3 A Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

SMD TRANSISTOR MARKING 2A

Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.

245 transistor

Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

2SB1424

Abstract: 2SD2150 T100
Contextual Info: Low Frequency Transistor 20V, 3A 2SD2150 zDimensions(Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2

Contextual Info: 2SB1424 / 2SA1585S Transistors Low VCE sat Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1

Contextual Info: Product specification 2SB1424 Features Low VCE sat . VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20

Contextual Info: 2SB1424 Epitaxial Planar PNP Transistors SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -20 Vdc Collector-Emitter Voltage VCEO -20 Vdc Emitter-Base Voltage

sot89 bv

Abstract: BV SOT SOT-89 2SB1424
Contextual Info: 2SB1424 Epitaxial Planar PNP Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -20 Vdc Collector-Emitter Voltage VCEO -20 Vdc Emitter-Base Voltage

2SB1424

Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Contextual Info: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446