2SB1440 Search Results

2SB1440

Abstract: 2SD2185 DSA003720 DSA00372056
Contextual Info: Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 45° * 0.5±0.08 1.5±0.1 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO

2SB1440G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD2185G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

2SB1440

Abstract: 2SD2185
Contextual Info: Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage

2SB1440

Abstract: 2SD2185
Contextual Info: Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 4.5±0.1 1.6±0.2 Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3 2 0.5±0.08 1.5±0.1

Contextual Info: Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD2185 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Low collector-emitter saturation voltage VCE sat • Mini Power type package, allowing downsizing of the equipment

2SB1440G

Abstract: 2SD2185G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD2185G • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SB1440

Abstract: 2SD2185
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 2.5±0.1 4.0+0.25 –0.20 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD2185 4.5±0.1 1.6±0.2 1 3 2 0.5±0.08 2.5±0.1 0.4±0.04 d p lan inc ea

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 1.5±0.1 3 2 0.5±0.08 0.4±0.04 di p Pl lan nclu ea e se

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD2185G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SB1440G • Package • Low collector-emitter saturation voltage VCE(sat)

2SB1260R

Abstract: 2SB1440 2SD2185
Contextual Info: 2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4  Low collector-emitter saturation voltage VCE sat  For low-frequency output amplification

2SB1440G

Abstract: 2SD2185G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440G • Package • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment

2SD2185G

Abstract: 2SB1440G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SB1440G • Features ue pl d in an c se ed lud

2SB1440

Abstract: 2SD2185
Contextual Info: Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 45° * 0.5±0.08 1.5±0.1 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO

Contextual Info: Product specification 2SB1440 Features Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25

2SB1440

Abstract: 2SD2185
Contextual Info: Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5

2SB1440G

Abstract: 2SD2185G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD2185G ue pl d in an c se ed lud pl vi an m m es

2SB1440

Abstract: 2SD2185
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD2185 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1440 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD2185 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1440 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z For low-frequency output amplification z Complementary to 2SD2185

2SB1424

Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Contextual Info: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446