2SB155 Search Results

2SB155 Datasheets (97)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB155	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	36.65KB	1
2SB155	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	106.88KB	2
2SB155	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	186.17KB	2
2SB155	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.03KB	1
2SB155	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.31KB	1
2SB155	Unknown	Vintage Transistor Datasheets	Scan	PDF	48.29KB	1
2SB155	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.87KB	1
2SB155	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	35.38KB	1
2SB155	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.2KB	1
2SB155	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	46.04KB	1
2SB155	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	29.73KB	1
2SB155	Unknown	Cross Reference Datasheet	Scan	PDF	35.81KB	1
2SB1550	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.16KB	1
2SB1550	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	122.52KB	1

2SB1550	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.8KB	1
2SB1550	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	36.71KB	1
2SB1550	ROHM	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE	Scan	PDF	89.98KB	2
2SB1550	ROHM	TO-220, TO-220FP, TO-220FN, HRT Transistors	Scan	PDF	209.93KB	2
2SB1551	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.16KB	1
2SB1551	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	122.52KB	1

2SB155 Price and Stock

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Sanken Electric Co Ltd 2SB1559 TRANS PNP DARL 150V 8A TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1559	Bulk	85		1	1 $4.46 10 $2.94 100 $2.07 1000 $1.58 10000 $1.45	Buy Now
Quest Components	2SB1559		320			1 $3.33 10 $3.33 100 $2.22 1000 $2.05 10000 $2.05	Buy Now
Santek 2SB1559 POWER BIPOLAR TRANSISTOR, 8A I(C), 150V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 3 PIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB1559		63			1 $1.88 10 $1.88 100 $1.13 1000 $1.13 10000 $1.13	Buy Now

2SB155 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SB1557- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER U nit in mm POW ER AM PLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2 S D 2 3 8 6 03.2*0.2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SB1557· --140V 2-16C1A	PDF
2SB1559 Abstract: 2SD2389 Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base	Original	2SB1559 2SD2389 2SB1559 2SD2389	PDF
2SD2389 Abstract: audio Darlington 6A 2SB1559 Contextual Info: Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SB1559 2SD2389 2SD2389 audio Darlington 6A 2SB1559	PDF
2SB1558 Abstract: 2SD2387 Contextual Info: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2SB1558 2SD2387 2SB1558 2SD2387	PDF
2SD2386 Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION	Original	2SD2386 2SB1557 2SD2386 2SB1557 NPN POWER DARLINGTON TRANSISTORS	PDF
2SB1551 Contextual Info: SavantIC Semiconductor Product Specification 2SB1551 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to	Original	2SB1551 O-220Fa O-220Fa) -20mA 2SB1551	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1555 2SD2384	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
Contextual Info: Power Transistors 2SB1553 Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Allowing automatic insertion with radial taping	Original	2SB1553	PDF
B1557 Abstract: 2SB1557 2SD2386 Contextual Info: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2SB1557 2SD2386 2-16C1A B1557 2SB1557 2SD2386	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
2SB1558 Abstract: 2SD2387 Contextual Info: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú	OCR Scan	2SD2387 2SB1558 2SB1558 2SD2387	PDF
2SB1555 Abstract: 2-21F1A 2SD2384 Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SB1555 --140V 2SD2384 2SB1555 2-21F1A	PDF
TOSHIBA Transistor Silicon PNP Epitaxial Type Abstract: 2SB1557 2SD2386 Contextual Info: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1557 --140V 2SD2386 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1557	PDF

2SB1553 Contextual Info: Power Transistors 2SB1553 Silicon PNP epitaxial planar type Unit: mm 18.0±0.5 Solder Dip Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −6 V Peak collector current ICP −6	Original	2SB1553 2SB1553	PDF
D2387 Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387 Contextual Info: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387	PDF
2SB1550 Contextual Info: h ÿ > 'S /'Transistors 2SB1550 2SB1550 Epitaxial Planar PNP Silicon Transistor Darlington Freq. Power Amp. • M i r fiiE l/ D im e n s io n s (Unit : mm) 9 — U > S >i£t&bT hFE A 'iS '- 'o 1) 2) * - 4.5± 0.2 KF*3»o ¿3,6±0.2 3 ) ^ - i 5 7 o i • Features	OCR Scan	2SB1550 O-220 SC-46 2SB1550	PDF
2-21F1A Abstract: 2SB1555 2SD2384 Contextual Info: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics	Original	2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384	PDF
Contextual Info: T O SH IB A 2SD2384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2384 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO —140V (Mm.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SD2384 --140V 2SB1555	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 PO W ER AM PLIFIER APPLICATIONS Unit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1557 ^o 1 , / J- f / i k A 5	OCR Scan	2SD2386 2SB1557	PDF
2SD2386 Abstract: 2SB1557 npn DARLINGTON 10A Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION	Original	2SD2386 2SB1557 2SD2386 2SB1557 npn DARLINGTON 10A	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2	OCR Scan	2SD2386 2SB1557 2SD2386	PDF
2SB1558 Abstract: 2SD2387 Contextual Info: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1558 2SD2387 2SB1558	PDF
a1000n Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385 Contextual Info: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SB1556 2SD2385 a1000n common emitter amplifier 2-21F1A 2SB1556 2SD2385	PDF

2SB155 Search Results

2SB155 Datasheets (97)

2SB155 Price and Stock

Sanken Electric Co Ltd 2SB1559

Santek 2SB1559

2SB155 Datasheets Context Search

2SB1559

2SD2389

2SB1558

2SD2386

2SB1551

2SB1557

B1557

2SB1557

2SB1558

2SB1555

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SB1553

D2387

2SB1550

2-21F1A

2SD2386

2SB1557

2SB1558

a1000n