2SB169 Search Results

Contextual Info: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zDimensions (Units : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

2SB1694

Abstract: T106
Contextual Info: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

Contextual Info: General purpose transistor QSZ2 A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package. Dimensions Unit : mm Structure Silicon epitaxial planar transistor QSZ2 (5) (1) 0.3~0.6 0.85 0∼0.1 Applications DC / DC converter Motor driver

Contextual Info: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 Applications Low frequency amplifier Deiver External dimensions (Unit : mm) TSMT3 1.0MAX Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −180mV

Contextual Info: 2SB1697 Transistors Low Frequency Amplifier -12V, -2A 2SB1697 External dimensions (Unit : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 Features Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions

2SB1690

Contextual Info: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

2SB1697

Abstract: T100
Contextual Info: 2SB1697 Transistors Low Frequency Amplifier -12V, -2A 2SB1697 zExternal dimensions (Units : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 zFeatures Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions

2SB1695K

Abstract: T146
Contextual Info: 2SB1695K Transistors Low frequency amplifier 2SB1695K !External dimensions Units : mm !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) !Application Low frequency amplifier

2SB1690

Contextual Info: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 !Applications Low frequency amplifier Deiver !External dimensions (Unit : mm) 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 !Features 1) A collector current is large. 2) Collector saturation voltage is low.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 1.50+0.25

Contextual Info: 2SB1694 2SB1694FRA Datasheet PNP -1A -30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline Parameter Value VCEO IC -30V -1A UMT3 Collector Base Emitter 2SB1694FRA 2SB1694 SOT-323 SC-70 lFeatures 1) A Collecotr current is large.General Purpose.

2SB1690

Abstract: 3203
Contextual Info: SPICE PARAMETER 2SB1690 by ROHM TR Div. * 2SB1690 PNP BJT model * Date: 2006/12/01 .MODEL 2SB1690 PNP + IS=260.00E-15 + BF=435.07 + VAF=11.229 + IKF=1.2673 + ISE=260.00E-15 + NE=2.0356 + BR=214.53 + VAR=100 + IKR=6.0651E-3 + ISC=464.05E-15 + NC=2.5092 + NK=.20425

3203

Abstract: transistor 3203 2SB1697
Contextual Info: SPICE PARAMETER 2SB1697 by ROHM TR Div. * 2SB1697 PNP BJT model * Date: 2006/12/01 .MODEL 2SB1697 PNP + IS=260.00E-15 + BF=435.07 + VAF=11.229 + IKF=1.2673 + ISE=260.00E-15 + NE=2.0356 + BR=214.53 + VAR=100 + IKR=6.0651E-3 + ISC=464.05E-15 + NC=2.5092 + NK=.20425

2SB1699

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1699 Silicon PNP epitaxial planar type Unit: mm For power amplification 4.5±0.1 1.6±0.2 Unit −60 V VCEO −60 V Emitter-base voltage (Collector open) VEBO −6 V IC −2 A ICP

Contextual Info: QSZ1 Transistors General purpose transistor QSZ1 A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package. zExternal dimensions Unit : mm zApplications DC / DC converter Motor driver QSZ1 zStructure Silicon epitaxial planar transistor ROHM : TSMT5

2SB1695

Contextual Info: 2SB1695 Transistors Low frequency amplifier 2SB1695 zExternal dimensions Unit : mm zApplication Low frequency amplifier Driver TSMT3 1.0MAX zFeatures 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA 2.9 0.85 0.4 0.7 1.6

2SB1691

Abstract: 2SD2655 Hitachi DSA0076
Contextual Info: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier ADE-208-1387A Z Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

2SB1693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) 1.9±0.1 Collector current

Contextual Info: 2SB1697 Transistors Low Frequency Amplifier -12V, -2A 2SB1697 zExternal dimensions (Units : mm) 4.0 2.5 0.4 0.5 (1) (2) 0.5 3.0 1.5 1.0 1.6 4.5 zFeatures Low VCE(sat) VCE(sat) ≤ −180mV (IC /IB=−1A/−50mA) 0.4 1.5 0.4 1.5 (3) Each lead has same dimensions

Contextual Info: 2SB1690 Transistors General purpose amplification −12V, −2A 2SB1690 !Applications Low frequency amplifier Deiver !External dimensions (Units : mm) 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 !Features 1) A collector current is large. 2) Collector saturation voltage is low.

Contextual Info: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 1.25 !Features 1) A collector current is large. 2) Collector saturation voltage is low.

2SB1698

Abstract: T100
Contextual Info: 2SB1698 Transistors Low frequency amplifier 2SB1698 zExternal dimensions Units : mm 4.0 2.5 0.5 (1) (2) 0.5 3.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA 0.4 1.5 1.0 1.6 4.5 zApplication Low frequency amplifier

2SB1694

Abstract: T106
Contextual Info: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 1.25 !Features 1) A collector current is large. 2) Collector saturation voltage is low.

2SB1690

Abstract: 2SB1690K T146
Contextual Info: 2SB1690K/2SB1690 Transistors General purpose amplification -12V, -2A 2SB1690K/2SB1690 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Deiver 0.4 Each lead has same dimensions 1.0MAX 0.85 0.7 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 ROHM : TSMT3