2SB17 Search Results

2SB1733

Contextual Info: 2SB1733 Transistors General purpose amplification −30V, −1A 2SB1733 zDimensions (Unit : mm) 0.2Max. zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. −350mV

marking z04

Abstract: 2SB1706 2SD2671 tsmt5 "marking code" Z04
Contextual Info: QSZ4 Transistors General purpose transistor isolated transistor and diode QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ4 (5) (4) zFeatures 1) Low VCE(sat)

2SB1739

Abstract: 2SD2720 a0437 IT11163
Contextual Info: 2SB1739 / 2SD2720 Ordering number : ENA0437A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1739 / 2SD2720 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter.

2SD2670

Abstract: marking code z03 2SB1705
Contextual Info: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor

2SB1709

Abstract: RB461F QSL9
Contextual Info: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL9 0.3 to 0.6 zStructure Silicon epitaxial planar transistor

2SB1740

Abstract: TA 7504 a0474-1 2sb174
Contextual Info: 2SB1740 Ordering number : ENA0474 SANYO Semiconductors DATA SHEET 2SB1740 PNP Epitaxial Planar Silicon Transistor Driver Applications Features • • • • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process.

2sd2693

Contextual Info: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

2sd2693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

2sd2693

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

Contextual Info: 2SB1733 Transistors General purpose amplification −30V, −1A 2SB1733 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −350mV

Contextual Info: QSL11 Transistors General purpose transistor isolated transistor and diode QSL11 A 2SB1710 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver zExternal dimensions (Units : mm) QSL11 (5) (1) ROHM : TSMT5

Contextual Info: 2SB1730 Transistors General purpose amplification −12V, −2A 2SB1730 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) 0.2 0.2 0.85Max. 0~0.1 0.77 0.17 ROHM : TUMT3 Package 1.7 2.1 zPackaging specifications Type (1) 2.0 0.3

Contextual Info: 2SB1732 Transistors Genera purpose amplification −12V, −1.5A 2SB1732 zExternal dimensions (Unit : mm) (1) 0.2 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA 1.7

Contextual Info: 2SB1706 Transistors Low frequency amplifier 2SB1706 zApplication Low frequency amplifier Driver zExternal dimensions Unit : mm Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 0~0.1 (1) (2) 0.95 0.95 1.9 2.9 ROHM : TSMT3 2SB1706 0.16 0.3 ~0.6 zFeatures

Contextual Info: 2SB1730 Transistors General purpose amplification −12V, −2A 2SB1730 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) 0.2 0.2 0.85Max. 0~0.1 0.77 0.17 ROHM : TUMT3 Package 1.7 2.1 zPackaging specifications Type (1) 2.0 0.3

2sd2693

Abstract: 2SD2693A 2SB1724 2SB1724A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te

Contextual Info: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver QSL9 0.3 to 0.6 Structure Silicon epitaxial planar transistor

Contextual Info: 2SB1706 Transistors Low frequency amplifier 2SB1706 External dimensions Unit : mm Application Low frequency amplifier Driver TSMT3 1.0MAX Features 1) A collector current is large. 2) VCE(sat) ≤ -370mV At lc= -1.5A / lB= -75mA 2.9 0.85 0.4 0.7 1.6 2.8 (3)

2SB1710

Contextual Info: 2SB1710 Transistors General purpose amplification −30V, −1A 2SB1710 zExternal dimensions (Units : mm) zApplication Low frequency amplifier Driver 2.8 Limits −30 −30 −6 −1 −2 500 150 −55~+150 0.4 (3) (1) 0.85 0.7 1.0MAX (2) Each lead has same dimensions

2SB1709

Abstract: RB461F MARKING L09 QSL9
Contextual Info: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. !External dimensions (Units : mm) !Applications DC / DC converter Motor driver QSL9 0.3~0.6 ROHM : TSMT5

2sd2693

Abstract: 2SD2693A 2SB1724 2SB1724A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features

pnp datasheet

Abstract: 2SB1708
Contextual Info: SPICE PARAMETER 2SB1708 by ROHM TR Div. * 2SB1708 PNP BJT model * Date: 2006/12/07 .MODEL 2SB1708 PNP + IS=3.8000E-12 + BF=470.25 + VAF=30.115 + IKF=8.4720 + ISE=3.8000E-12 + NE=1.9770 + BR=28.873 + VAR=100 + IKR=2.5384 + ISC=821.44E-12 + NC=2.3924 + NK=.82023

tr 13005

Abstract: 2SB1732 12842
Contextual Info: SPICE PARAMETER 2SB1732 by ROHM TR Div. * 2SB1732 PNP BJT model * Date: 2006/12/07 .MODEL 2SB1732 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699

2SB171

Abstract: diode BY 399 2SB1713
Contextual Info: SPICE PARAMETER 2SB1713 by ROHM TR Div. * 2SB1713 PNP BJT model * Date: 2006/12/06 .MODEL 2SB1713 PNP + IS=2.5000E-12 + BF=437.13 + VAF=11.399 + IKF=3.3939 + ISE=2.5000E-12 + NE=2.0079 + BR=121.78 + VAR=100 + IKR=1.3895 + ISC=6.0713E-12 + NC=1.9587 + NK=.62951