2SB649 Search Results

QW-R204-005

Contextual Info: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2SB649

Abstract: 669a 2SB649A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity

2SD669

Abstract: 2SD669A ALL 2SD669A DSA003644
Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C)

transistor 2sb649

Abstract: transistor 160v 1.5a pnp 2SB649 2SD669
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669

transistor 649A

Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD669A

Abstract: 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor 649A

Abstract: 2SB649 2SB649A 649a
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

Contextual Info: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

Contextual Info: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649 2SB649A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB649/A PNP SILICON TRANSISTOR BI POLAR POWER GEN ERAL PU RPOSE T RAN SI ST OR 1 1 SOT-89 SOT-223 ̈ APPLI CAT I ON S 1 * Low frequency power amplifier complementary pair with UTC 2SD669/A 1 TO-252 TO-92 1 1 TO-92NL TO-126 1 TO-126C

transistor 2sb649

Abstract: 2SB649A 2SB649
Contextual Info: 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE

Contextual Info: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251

Contextual Info: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

Contextual Info: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2SB669

Abstract: UTC pnp transistor 2sb649 2SB669A transistor 2sb669 2sb649a
Contextual Info: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2SD669

Contextual Info: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2SB669

Abstract: 2SB669A 2sb649 2sb649a
Contextual Info: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR . BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2sb649

Abstract: 2sb649a 2SB669
Contextual Info: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2sd649

Abstract: transistor 649A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)