2SC 1096 Search Results

2sc1096

Abstract: 2SA634 2SC1069 2SC09 2sc109 2SA634 M 251C transistor 2sa634 2SC096
Contextual Info: 2SA634/2SC1096 2SA 634/2SC 1096 P N P /N P N n V P N P /N P N S IL IC O N E P IT A X IA L T R A N S IS T O R A udio Frequency Power A m p lifie r, Low Speed Sw itching 1$ ^ / F E A T U R E S •W M tH tl 3 ~ 5 W R L = 4 il c O * — X r p jf , f i — 7 $ 7 v7<ntii-J]fflHZM &o

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TEA 1091

Abstract: 2Sc2565 2sc2550 2SC2525 TRANSISTOR 2sc2526 2SC2530 25C2564 2SC2526 cc 1094 DUQN ic tea 1090
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

l107a

Abstract: The Transistor Manual 2sa 2SC520A 2SC2337A 2SA817A transistor Il-200-5 138B 2SA817A 2SC1627A 2SA JAPAN TRANSISTOR MANUAL
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

SML-LXR44SRC-TR

Contextual Info: UNCONTROLLED DOCUMENT 1,40 [0 ,0 5 5 ] REV. A B CATHŒDE MARK 1 PART NUMBER REV. SM L-LXR44SRC -TR B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10849. E.C.N. #10968. DATE 4.1.02 3.13.03 3.60 [0.142] I_ ELECTRO-OPTICAL CHARACTERISTICS Ta =25X SOLDERING AT

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: UNCONTROLLED DOCUMENT 3 .0 0 [0 .1 1 8 ] R Û .3 5 [ R 0 .0 1 4 ] 3 P L S . P O L A R IT Y 3 .0 0 [0 .1 1 8 ] 2 ,0 0 M ARK 3 AMBER YELLOW 1 2 SML-LX1 5AYC-TR B E .C .N . N U M BER AND R E V IS IO N A E .C .N . #10967. 3 . 1 4 .0 3 B E .C .N . #11010. 7 . 3 .0 3

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

Contextual Info: Tb TOSHIBA {DISCRETE/OPTO} DE^IO^ESO GOD?^ -y 9097250 TOSHIBA DISCRETE/OPTO ~ 5bC 07799 D T ' 3 3*// SILICON NPN TRIPLE DIFFUSED M ESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 2 5 .O U A X . FEATURES: 0Z1.O U A X . • High Voltage :VCBO=1500V

SML-LX1206PGC-TR

Contextual Info: UNCONTROLLED DOCUMENT - —I - 2.00 [0 .0 7 9 ] • f REV, oJ CATHODE 1,60 [0 ,0 6 3 ] + 1_ ■ R 0 .4 0 (2 1 n [R 0 .0 1 6 ] PLSJ ■>— [>— » ANODE MARK REV. SML-LX1206PGC-TR E E .C .N . NUM BER AND R E V IS IO N E .C .N . #10404.

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

transistor 2SC114

Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

BD109

Abstract: TIP27 S1050 m06b GERMANIUM PNP LOW POWER TRANSISTORS BD 148 BLY88 transistor BD400 2sc178 2SC176
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol

Contextual Info: CXA1096M SONY, 8-bit 20 MSPS Flash A/D Converter TTL I/O Description The C X A 1 0 9 6 M is an 8-bit 2 0 MSPS high speed A /D converter IC. This IC is suitable for a wide range of applications where A /D high speed operation is required. Features • •

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785 7.7 ~ 8 .5 G H z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit, millimeters inches The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8.5

GFC39V6471

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6471 s s s * “ " " 6 .4 —7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6471 is an internally impedance-matched GaAs power F E T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pvoduction MGFC36 V 7785 p la n * ° r d ,s c o n t .n u e 7.7 ~ 8.5G H z BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC36V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7.7 ~ 8.5