2SC LOW NOISE Search Results

2SA1083

Abstract: 2sa1084 2SA1085
Contextual Info: 2SA1083,2SA1084,2SA1085 Silicon PNP Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SC 2545, 2SC 2546 and 2SC 2547 Outline T O -9 2 1 1. E m itte r 2. Collector 3. B a s e 126 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C)

2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Contextual Info: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240

C 2021M

Contextual Info: h ~7 > y 7 s £ / J ransistors 2SC2021LN/2SC2021MLN 2SC 2021LN 2SC 2021M LN i t r.$ * sS T \ r f \ s —? B NPN y ' J =1> b 7 > y z $ Epitaxial Planar NPN Silicon Transistors Freq. Low Noise Amp. • ÿfjg ^J -^H /D im e n s io n s Unit : mm) 1) VcE(sat)#,' i& '-'o

2SC605

Abstract: 2SC606
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 SC 605 B , 2SC606(B) FOR TV TUNER 2SC 606(B ) : VHF RF AMPLIFIER 2SC 605(B ) : VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE D IM EN SIO N S (U nit : mm) • Low NF high Gpe. NF = 2.0 dB TY P . Gpe = 24 dB TY P . <f = 200 MHz)

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise

2SA1031

Abstract: 2SA1032
Contextual Info: 2SA1031,2SA1032 Silicon PNP Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SC 458 LG and 2 S C 2310 Outline TO-92 (1 ) 1. Emitter 2. Collector 3. Base 118 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse

2SC3779

Abstract: U40j 2SC3779 transistor
Contextual Info: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).

2SC 3531

Contextual Info: T O SH IB A 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5092 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure, High Gain. NF= 1.8dB, |S2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: T O SH IB A 2SC5085 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 508 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S2 1 el2= lldB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

1951b

Abstract: 2SC3778 transistor UHF Marking TRANSISTOR 777
Contextual Info: ,| O rd e rin g n u m b e r :EN 1 9 5 l l T 2SC 3778 NPN Epitaxial Planar Silicon Transistor S A N Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifieres,wide-band amplifiers Features . Small noise figure: NF=2.2dB typ f=0.9GHz .

2SC5316

Contextual Info: TO SH IBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • U nit in mm 2.1 ±0.1 I m —r 1 o +| +1 m O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)

2SC5316

Contextual Info: 2SC5316 TO SH IBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series U nit in mm 2.1 ±0.1 ,1.25 ± 0.1, • • —r m I +| +1 om O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)

3722K

Contextual Info: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K

Contextual Info: HITACHI 2SC 4900-Silicon NPN Bipolar Transistor Application M P A K -4 VHF & UHF wide band amplifire 2 Features • High gain bandwidth product f j = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 4 1. 2. 3.

BFQ60

Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

TRANSISTOR D 570

Abstract: BF 145 transistor transistor bf
Contextual Info: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled

Transistor BFR 35

Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

Contextual Info: TOSHIBA TENTATIVE 2SC 5315 T O SH IBA TRANSISTOR H MT SILICON NPN EPITAXIAL PLANAR TYPE f ^ V 1• H5T V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS U n it in mm 3 f l. M T fl fl 1 2 M IC R O W A V E CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

2SC644

Abstract: 2SC644 S 2SC644 R
Contextual Info: 2SC644 2SCÓ44 V ij.l] > N P N + U —± ? Ö / S i N P N E p ita x ia l P la n a r Low Noise Amplifier í# $£ / Features • Stia illIfc N F ¿ î{ Ê l'0 / L o w noise figure • hFE / " L a r g e hFE Absolute Maximum Ratings T a=25°C Sym bol Item 'SEE

2SC2785

Abstract: transistor IR 324 C to 220 2SA1175 2sc2785 ef VCE-60
Contextual Info: NEC D ES C R IP TIO N NPN SILICON TRANSISTOR 2SC2785 The 2SC 2785 is designed for use in driver stage of A F amplifier and PACKAG E D IM E N S IO N S low speed switching. in millimeters inches FEATURES • High Voltage 4 .2 M A X . V c E O : 5 0 V M IN .