2SC157 Search Results

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ~5t DE | ciDc17ESD 0 D 0 7 4 4 Ö 56L 0 7 4 4 8 CDIS C R E T E / O P T O 0 7^ jy- / 3 2SC1576 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS REGULATOR APPLICATIONS. U n i t in nun HIGH VOLTAGE SWITCHING APPLICATIONS.

2SC1681

Abstract: 2sc1971 2SC2990 2SC1165 2SC1843 2SC1763 2SC1764 2SC2363 2SD1486 2SC1740LN
Contextual Info: - 118m % T y p e No. * 2SC 1571 * 2SC 1571L tt « Manuf. = ì¥ SANYO 2SC1570 = n 2SC1570 2SC 1573 & T 2SC4218 2SC 1573A & T 2SC4218 * 2SC 1572 * 2SC 15 74 * 2SC 1577 * 2SC 1578 M 2 TOSHIBA 2SC 1681 m b NEC 2SC 1843 B 3L HITACHI 2SC 1775 m ± ii FUJITSU □

2SC4081

Contextual Info: MCC TM Micro Commercial Components 2SC4081-A 2SC4081-B 2SC4081-C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x Low Cob . Cob=2.0pF Typ. Complementary to 2SC1576A x Case Material: Molded Plastic. UL Flammability

bs270

Contextual Info: MCC TM Micro Commercial Components 2SC4081 2SC4081-A 2SC4081-B 2SC4081-C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x Low Cob . Cob=2.0pF Typ. Complementary to 2SC1576A x

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO

transistor tl 4311

Abstract: transistor 2sc1570 TRANSISTOR BC 157 TRANSISTOR BC 158 PA 2027A 2SC1570 TRANSISTOR IFW S2003A opa 2064 TRANSISTOR "BC 157"
Contextual Info: 3EE D SANYO SE MICONDUCTOR CORP 7Ti707b OGDÖÖ3Ö 1 | r - 2003A ' 2 f - / s N P N Epitaxial P la n a r S ilic o n T ra n s is to r Low-Noise Amp Applications 43 IE The 2SC1570 is developed as very low-noise tra n s isto r and is especially suited for use in equ alizer first

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO

2SC1573

Abstract: 2SA879 2SC1573A 2SC1573B
Contextual Info: Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO.

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: Transistors 2SA0879 2SA879 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: Transistor 2SA0879 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9±0.2 4.9±0.2 8.6±0.2 • Features High collector to emitter voltage VCEO. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

2sc3084

Abstract: 2SC2079 2SC2441 25C30 25c3090 2SC2228
Contextual Info: Type Number A p p lic a t io n s 2SC1571 FP V ery Low Noise L F Amp 2SC1571L FP V ery L ow Noise L F Amp 2SC2057 Color T V Video IF Amp 2SC2079 HF Power Amp cu 6 8 •2 D o >> 0Í 2SC1571 NP 2SC1571L (NP) aC 3 o s CO o « a 3o tn Electrical Characteristics/Ta=25°C

2SA879

Abstract: 2SC1573
Contextual Info: Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9±0.2 4.9±0.2 ● 8.6±0.2 • Features High collector to emitter voltage VCEO. +0.3 0.7–0.2 0.7±0.1 ■ Absolute Maximum Ratings Ta=25˚C

TL 2262

Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
Contextual Info: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

Contextual Info: MCC 2SC4081
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • NPN Silicon Epitaxial Transistors Low Cob . Cob=2.0pF Typ. Complementary to 2SC1576A Maximum Ratings Symbol VCEO

2SC1576

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC1576 INDUSTRIAL APPLICATIONS REGULATOR APPLICATIONS. Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: • High Voltage : V q j q =450V • Low Saturation Voltage : : VCE sat = 1.5V (Max.) (IC=5A, 1b =0.8A) • High Speed Switching Time : tstg=3.0ys (Typ.)

transistor c1570

Abstract: c1570 2SC1571 C1571 transistor 2SC1570 transistor 2sc1570 transistor c1571 1571L C1571L 2SC1571L
Contextual Info: SANYO SEMICONDUCTOR 12E CORP 70, 1571, 1571L 2003A »"J 7 ^ 7 07t, QD0m42 NPN Epitaxial Planar Silico n Transistors Very Low Noise Amp Applications 431D . The 2SC1570, 1571» 1571L are developed as very low-noise transistors and are especially suited for use in equalizer first stage of high-grade type stereo

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2 • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879

2SA0879

Abstract: 2SA879 2SC1573
Contextual Info: Transistor 2SA0879 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. +0.3 2.54±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SC1573

Abstract: 2SC1573A 2SA0879 2SA879 2SC1573B
Contextual Info: Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879 2SA879 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO.

Contextual Info: 2SC1578 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)600 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)