2SC162 Search Results

2SC1627A

Contextual Info: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)

smd transistor marking D17

Abstract: PT-200 2SC1622A
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

500ma 40v pnp

Abstract: 2sA814 datasheet 2SA814 2SA815
Contextual Info: Inchange Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

2SC1623 sot-23

Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA

A817A

Abstract: 2SA817A 2SC1627A
Contextual Info: 2SA817A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA817A ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 2SC1627A とコンプリメンタリになります。 • 30~35 W 用アンプのドライバに最適です。

transistor c1627a

Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
Contextual Info: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)

2SA814

Abstract: 2SA815 2SA815 y 2SC1624
Contextual Info: SavantIC Semiconductor Product Specification 2SA814 2SA815 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

2SC1626

Abstract: 2SA816
Contextual Info: SavantIC Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current

Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

applications of single stage common emitter

Abstract: 2SA817A 2SC1627A
Contextual Info: TOSHIBA 2SA817A 2SA817A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 M A X Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

2SA812K

Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Contextual Info: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA

2SC1623K

Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
Contextual Info: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

C1984

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ±0.2 +0.1 0.65 –0.15

npn sot23 l6

Abstract: 2SC1623 marking 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking
Contextual Info: 2SC1623 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage

Contextual Info: • v - 7*- f t h NEC ' > U = i > h 7 > y x ^ S ilico n T ra n s is to r 2SC1623 N P N l t f ^ ^ y 7 M ^ > y n > b ^ > m ' s 7 > m $ m m e A - Ì 7 U 7 K lC fflt U T M J S T 'T o 0 2 S A 8 1 2 ¿; 3 > 7 ° U ;< 2 . 8 ± 0.2 1.5 U î f f f l f è t t o O h F E * '" l'o

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:

ge-2 transistor

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC1627A TRANSISTOR NPN FEATURES T O - 9 2 M O D P cm : 0.8W (Tam b=25“C ) current 1.E M IT T E R Ic m : 0.4 A 2.C O L L E C T O R vo lta ge 3.B A S E V(BR)CBO: 80 V M d s to ra g e ju n ctio n tem perature ran ge

Contextual Info: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range

Transistor hFE CLASSIFICATION Marking CE

Abstract: 2SC1623
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1623 Features • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V Maximum Ratings Symbol V CEO

TC-1482A

Abstract: TC1482 2SC1622A d18 nec marking D15 nec marking power amplifier 1482A HFE9 marking D18 2SC1622A-T2B D17
Contextual Info: SILICON TRANSISTOR ELECTRON DEVICE 2SC1622A £ AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC Current Gain: hFE = 600 TYP. VCE = 6.0 V , lc = 1.0 mA 2.8 ± 0.2 -g do

2sc1627a

Contextual Info: 2SC1627A TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 Features — 0.400 0.600 13.800 14.200 Complementary to 2SA817A Driver Stage Application of 30 to 35 Watts Amplifiers — 1.500 TYP 2.900 3.100

2SC1627

Abstract: 2SA817
Contextual Info: 2SC1627 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC1627 励振段増幅用 電力増幅用 単位: mm • 2SA817 とコンプリメンタリになります。 • 20~25 W 用アンプのドライバに適しています。